# DMN3018SSS-13

**Diodes Incorporated** · MOSFETs · SO-8

DMN3018SSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, internally tied to the other source pins (2, 3) and the gate protection diode. |
| 2 | S | passive | Source of the N-channel MOSFET, internally tied to the other source pins (1, 3). |
| 3 | S | passive | Source of the N-channel MOSFET, internally tied to the other source pins (1, 2). |
| 4 | G | input | Gate of the N-channel MOSFET with an ESD protection diode, rated VGSS ±25 V with threshold 1 to 2.1 V. |
| 5 | D | passive | Drain of the N-channel MOSFET, 30 V VDSS, shorted to drain pins 6, 7 and 8. |
| 6 | D | passive | Drain of the N-channel MOSFET, 30 V VDSS, shorted to drain pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET, 30 V VDSS, shorted to drain pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET, 30 V VDSS, shorted to drain pins 5, 6 and 7. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS = 0V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 24V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -10 |  | 10 | μA | VGS = ±20V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.7 | 2.1 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 15 | 21 | mΩ | VGS = 10V, ID = 10A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 20 | 35 | mΩ | VGS = 4.5V, ID = 8.5A | 2 |
| Diode Forward Voltage | VSD | 0.5 |  | 1.2 | V | VGS = 0V, IS = 1A | 2 |
| Drain-Source Voltage | VDSS |  |  | 30 | V | Maximum Ratings @TA = 25°C | 2 |
| Gate-Source Voltage | VGSS | -25 |  | 25 | V | Maximum Ratings @TA = 25°C | 2 |
| Continuous Drain Current | ID |  |  | 7.3 | A | VGS = 10V, steady state, TA = 25°C (Note 5) | 2 |
| Continuous Drain Current | ID |  |  | 5.7 | A | VGS = 10V, steady state, TA = 70°C (Note 5) | 2 |
| Continuous Drain Current | ID |  |  | 9.7 | A | VGS = 10V, t<10s, TA = 25°C (Note 5) | 2 |
| Continuous Drain Current | ID |  |  | 7.8 | A | VGS = 10V, t<10s, TA = 70°C (Note 5) | 2 |
| Continuous Drain Current | ID |  |  | 5.5 | A | VGS = 4.5V, steady state, TA = 25°C (Note 5) | 2 |
| Continuous Drain Current | ID |  |  | 4.3 | A | VGS = 4.5V, steady state, TA = 70°C (Note 5) | 2 |
| Continuous Drain Current | ID |  |  | 7.6 | A | VGS = 4.5V, t<10s, TA = 25°C (Note 5) | 2 |
| Continuous Drain Current | ID |  |  | 5.8 | A | VGS = 4.5V, t<10s, TA = 70°C (Note 5) | 2 |
| Pulsed Drain Current | IDM |  |  | 60 | A | 10μs pulse, duty cycle = 1% | 2 |
| Maximum Body Diode Continuous Current | IS |  |  | 2.5 | A |  | 2 |
| Total Power Dissipation | PD |  | 1.4 |  | W | TA = 25°C (Note 4) | 2 |
| Total Power Dissipation | PD |  | 0.9 |  | W | TA = 70°C (Note 4) | 2 |
| Total Power Dissipation | PD |  | 1.7 |  | W | TA = 25°C (Note 5) | 2 |
| Total Power Dissipation | PD |  | 1.1 |  | W | TA = 70°C (Note 5) | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 90 |  | °C/W | Steady state (Note 4) | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 50 |  | °C/W | t<10s (Note 4) | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 75 |  | °C/W | Steady state (Note 5) | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 42 |  | °C/W | t<10s (Note 5) | 2 |
| Thermal Resistance, Junction to Case | RθJC |  | 7.6 |  | °C/W | Note 5 | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminal Connections Indicator: See diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. | 1 |

## CAD (KiCad official)

- Symbol: `DMN3018SSS-13`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `dmn3018sss-13-etched.step` / `dmn3018sss-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn3018sss-13.step` / `dmn3018sss-13.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885238898024448) (6 pp, sha256 `86081d554b2502c9`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmn3018sss-13-datasheet.pdf)