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DMN3018SSD-13

Public Made by Adom

by adom

Diodes Incorporated MOSFETs, SO-8. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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DMN3018SSD-13

Diodes Incorporated · MOSFETs · SO-8

DMN3018SSD-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of MOSFET element 2 (N-channel, 30V VDSS).
2 G2 input Gate of MOSFET element 2, ESD protected with gate protection diode, VGSS ±20V.
3 S1 passive Source of MOSFET element 1 (N-channel, 30V VDSS).
4 G1 input Gate of MOSFET element 1, ESD protected with gate protection diode, VGSS ±20V.
5 D1 passive Drain of MOSFET element 1, connected to pin 6; 30V VDSS, 6.7A continuous at TA=+25°C.
6 D1 passive Drain of MOSFET element 1, connected to pin 5; 30V VDSS, 6.7A continuous at TA=+25°C.
7 D2 passive Drain of MOSFET element 2, connected to pin 8; 30V VDSS, 6.7A continuous at TA=+25°C.
8 D2 passive Drain of MOSFET element 2, connected to pin 7; 30V VDSS, 6.7A continuous at TA=+25°C.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 6.7 A VGS = 10V, Steady State, TA = +25°C 2
Continuous Drain Current ID 5.3 A VGS = 10V, Steady State, TA = +70°C 2
Continuous Drain Current ID 8.7 A VGS = 10V, t < 10s, TA = +25°C 2
Continuous Drain Current ID 6.9 A VGS = 10V, t < 10s, TA = +70°C 2
Pulsed Drain Current IDM 60 A 10µs Pulse, Duty Cycle = 1% 2
Maximum Body Diode Continuous Current IS 2 A 2
Avalanche Current IAR 19 A L = 0.1mH 2
Repetitive Avalanche Energy EAR 18 mJ L = 0.1mH 2
Total Power Dissipation PD 1.5 W Note 5 (FR-4, 2oz copper, 1 inch square copper plate) 2
Thermal Resistance, Junction to Ambient (steady state) RθJA 83 °C/W Steady State, Note 5 2
Thermal Resistance, Junction to Ambient (t < 10s) RθJA 50 °C/W t < 10s, Note 5 2
Thermal Resistance, Junction to Case RθJC 14.5 °C/W Note 5 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 24V, VGS = 0V 2
Gate-Source Leakage IGSS -10 10 μA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 1 1.7 2.1 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(ON) 16 22 mΩ VGS = 10V, ID = 10A 2
Static Drain-Source On-Resistance RDS(ON) 23 30 mΩ VGS = 4.5V, ID = 6A 2
Diode Forward Voltage VSD 0.5 1.2 V VGS = 0V, IS = 1A 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. 1

CAD (KiCad official)

  • Symbol: DMN3018SSD-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dmn3018ssd-13-etched.step / dmn3018ssd-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn3018ssd-13.step / dmn3018ssd-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 d5f56e135460a926, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF