# DMN3016LSS-HXY

**HXY MOSFET** · MOSFETs · SOP-8

DMN3016LSS-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, connected to pins 2 and 3 (VDS 30V, ID 15A rated). |
| 2 | S | passive | Source of the N-channel MOSFET, connected to pins 1 and 3 (VDS 30V, ID 15A rated). |
| 3 | S | passive | Source of the N-channel MOSFET, connected to pins 1 and 2 (VDS 30V, ID 15A rated). |
| 4 | G | input | Gate of the N-channel MOSFET, with maximum gate-source voltage of ±20V and RDS(ON) specified at VGS=4.5V and 10V. |
| 5 | D | passive | Drain of the N-channel MOSFET, tied with pins 6, 7 and 8 (VDS 30V, ID 15A rated). |
| 6 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 7 and 8 (VDS 30V, ID 15A rated). |
| 7 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 6 and 8 (VDS 30V, ID 15A rated). |
| 8 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 6 and 7 (VDS 30V, ID 15A rated). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC=25℃ | 1 |
| Drain Current-Continuous | ID |  |  | 15 | A | TC=25℃ | 1 |
| Drain Current-Continuous (70℃) | ID (70℃) |  |  | 8.2 | A | TC=70℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 42 | A | TC=25℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 1.5 | W | TC=25℃ | 1 |
| Single pulse avalanche energy | EAS |  |  | 62 | mJ | Note 5; VDD=25V,VGS=10V,L=0.1mH,IAS=35A | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 36 | ℃/W | Note 2 | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V, ID=250uA | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ |  | 0.027 |  | V/℃ | Reference to 25℃, ID=1mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 7.5 | 9 | mΩ | VGS=10V, ID=10A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 11 | 14 | mΩ | VGS=4.5V, ID=8A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) |  | -5.8 |  | mV/℃ |  | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Forward Transconductance | gfs |  | 5.8 |  | S | VDS=5V, ID=10A | 2 |
| Gate Resistance | Rg |  | 2.2 | 3.8 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge (4.5V) | Qg |  | 12.6 | 17.6 | nC | VDS=15V, VGS=4.5V, ID=10A | 2 |
| Gate-Source Charge | Qgs |  | 4.2 | 5.9 | nC | VDS=15V, VGS=4.5V, ID=10A | 2 |
| Gate-Drain Charge | Qgd |  | 5.1 | 7.1 | nC | VDS=15V, VGS=4.5V, ID=10A | 2 |
| Turn-On Delay Time | Td(on) |  | 6.2 | 12.4 | ns | VDD=15V, VGS=10V, RG=3.3, ID=10A | 2 |
| Rise Time | Tr |  | 59 | 106 | ns | VDD=15V, VGS=10V, RG=3.3, ID=10A | 2 |
| Turn-Off Delay Time | Td(off) |  | 27.6 | 55 | ns | VDD=15V, VGS=10V, RG=3.3, ID=10A | 2 |
| Fall Time | Tf |  | 8.4 | 16.8 | ns | VDD=15V, VGS=10V, RG=3.3, ID=10A | 2 |
| Input Capacitance | Ciss |  | 1317 | 1845 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 163 | 228.2 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 131 | 183.4 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current | IS |  |  | 10.3 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | 42 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Reverse Recovery Time | trr |  | 12.5 |  | nS | IF=10A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr |  | 5 |  | nC | IF=10A, dI/dt=100A/µs, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `DMN3016LSS-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `dmn3016lss-hxy-etched.step` / `dmn3016lss-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn3016lss-hxy.step` / `dmn3016lss-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/dmn3016lss-hxy-datasheet.pdf) (6 pp, sha256 `83d934dcb5c3091c`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmn3016lss-hxy-datasheet.pdf)