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DMN3016LK3-13
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Diodes Incorporated MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMN3016LK3-13
Diodes Incorporated · MOSFETs · TO-252
DMN3016LK3-13 from Diodes Incorporated, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS(th) of 1.3V to 2.3V at ID = 250µA and an absolute maximum VGSS of ±20V. |
| 2 | D | passive | Drain (centre lead, also connected to the exposed tab); rated for VDSS of 30V and continuous ID of 37.8A at TC = +25°C. |
| 3 | S | passive | Source; the body-diode continuous current is rated at 2A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current, steady state | ID | 12.4 | A | VGS = 10V; TA = +25°C; Note 6 | 2 | ||
| Continuous Drain Current, steady state | ID | 10 | A | VGS = 10V; TA = +70°C; Note 6 | 2 | ||
| Continuous Drain Current, steady state | ID | 37.8 | A | VGS = 10V; TC = +25°C; Note 6 | 2 | ||
| Continuous Drain Current, steady state | ID | 30.3 | A | VGS = 10V; TC = +70°C; Note 6 | 2 | ||
| Continuous Drain Current, t<10s | ID | 17 | A | VGS = 10V; t<10s; TA = +25°C; Note 6 | 2 | ||
| Continuous Drain Current, t<10s | ID | 13.6 | A | VGS = 10V; t<10s; TA = +70°C; Note 6 | 2 | ||
| Maximum Body Diode Continuous Current | IS | 2 | A | 2 | |||
| Pulsed Drain Current | IDM | 90 | A | 10µs pulse, duty cycle = 1% | 2 | ||
| Avalanche Current | IAS | 22 | A | L = 0.1mH; Note 7 | 2 | ||
| Avalanche Energy | EAS | 24 | mJ | L = 0.1mH; Note 7 | 2 | ||
| Total Power Dissipation, steady state | PD | 1.6 | W | TA = +25°C; Note 5 | 2 | ||
| Total Power Dissipation, steady state | PD | 1 | W | TA = +70°C; Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient, steady state | RθJA | 75 | °C/W | Steady state; Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient, t<10s | RθJA | 34 | °C/W | t<10s; Note 5 | 2 | ||
| Total Power Dissipation, steady state | PD | 2.8 | W | TA = +25°C; Note 6 | 2 | ||
| Total Power Dissipation, steady state | PD | 1.8 | W | TA = +70°C; Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient, steady state | RθJA | 46 | °C/W | Steady state; Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient, t<10s | RθJA | 24 | °C/W | t<10s; Note 6 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 3.1 | °C/W | Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250μA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | TJ = +25°C; VDS = 30V, VGS = 0V | 3 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 3 | |
| Gate Threshold Voltage | VGS(th) | 1.3 | 2.3 | V | VDS = VGS, ID = 250μA | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8 | 12 | mΩ | VGS = 10V, ID = 11A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 12 | 16 | mΩ | VGS = 4.5V, ID = 9A | 3 | |
| Diode Forward Voltage | VSD | 0.7 | 1 | V | VGS = 0V, IS = 1A | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | Body Diode Reverse Recovery Charge Qrr, 10.4, nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. | 3 | |
| contacts | Copper | tin | Terminals: Matte Tin Finish Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMN3016LK3-13 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
dmn3016lk3-13-etched.step/dmn3016lk3-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn3016lk3-13.step/dmn3016lk3-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
76f1f60c280cee65, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMN3016LK3-13
**Diodes Incorporated** · MOSFETs · TO-252
DMN3016LK3-13 from Diodes Incorporated, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS(th) of 1.3V to 2.3V at ID = 250µA and an absolute maximum VGSS of ±20V. |
| 2 | D | passive | Drain (centre lead, also connected to the exposed tab); rated for VDSS of 30V and continuous ID of 37.8A at TC = +25°C. |
| 3 | S | passive | Source; the body-diode continuous current is rated at 2A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 30 | V | | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |
| Continuous Drain Current, steady state | ID | | | 12.4 | A | VGS = 10V; TA = +25°C; Note 6 | 2 |
| Continuous Drain Current, steady state | ID | | | 10 | A | VGS = 10V; TA = +70°C; Note 6 | 2 |
| Continuous Drain Current, steady state | ID | | | 37.8 | A | VGS = 10V; TC = +25°C; Note 6 | 2 |
| Continuous Drain Current, steady state | ID | | | 30.3 | A | VGS = 10V; TC = +70°C; Note 6 | 2 |
| Continuous Drain Current, t<10s | ID | | | 17 | A | VGS = 10V; t<10s; TA = +25°C; Note 6 | 2 |
| Continuous Drain Current, t<10s | ID | | | 13.6 | A | VGS = 10V; t<10s; TA = +70°C; Note 6 | 2 |
| Maximum Body Diode Continuous Current | IS | | | 2 | A | | 2 |
| Pulsed Drain Current | IDM | | | 90 | A | 10µs pulse, duty cycle = 1% | 2 |
| Avalanche Current | IAS | | | 22 | A | L = 0.1mH; Note 7 | 2 |
| Avalanche Energy | EAS | | | 24 | mJ | L = 0.1mH; Note 7 | 2 |
| Total Power Dissipation, steady state | PD | | | 1.6 | W | TA = +25°C; Note 5 | 2 |
| Total Power Dissipation, steady state | PD | | | 1 | W | TA = +70°C; Note 5 | 2 |
| Thermal Resistance, Junction to Ambient, steady state | RθJA | | | 75 | °C/W | Steady state; Note 5 | 2 |
| Thermal Resistance, Junction to Ambient, t<10s | RθJA | | | 34 | °C/W | t<10s; Note 5 | 2 |
| Total Power Dissipation, steady state | PD | | | 2.8 | W | TA = +25°C; Note 6 | 2 |
| Total Power Dissipation, steady state | PD | | | 1.8 | W | TA = +70°C; Note 6 | 2 |
| Thermal Resistance, Junction to Ambient, steady state | RθJA | | | 46 | °C/W | Steady state; Note 6 | 2 |
| Thermal Resistance, Junction to Ambient, t<10s | RθJA | | | 24 | °C/W | t<10s; Note 6 | 2 |
| Thermal Resistance, Junction to Case | RθJC | | | 3.1 | °C/W | Note 6 | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS = 0V, ID = 250μA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | TJ = +25°C; VDS = 30V, VGS = 0V | 3 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20V, VDS = 0V | 3 |
| Gate Threshold Voltage | VGS(th) | 1.3 | | 2.3 | V | VDS = VGS, ID = 250μA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 8 | 12 | mΩ | VGS = 10V, ID = 11A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 12 | 16 | mΩ | VGS = 4.5V, ID = 9A | 3 |
| Diode Forward Voltage | VSD | | 0.7 | 1 | V | VGS = 0V, IS = 1A | 3 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | | Body Diode Reverse Recovery Charge Qrr, 10.4, nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. | 3 |
| contacts | Copper | tin | Terminals: Matte Tin Finish Annealed over Copper Leadframe. | 1 |
## CAD (KiCad official)
- Symbol: `DMN3016LK3-13`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `dmn3016lk3-13-etched.step` / `dmn3016lk3-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn3016lk3-13.step` / `dmn3016lk3-13.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885266806923264) (7 pp, sha256 `76f1f60c280cee65`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmn3016lk3-13-datasheet.pdf)