component
DMN3009SK3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
DMN3009SK3-HXY
HXY MOSFET · MOSFETs · TO-252-2L
DMN3009SK3-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet rates gate-source voltage at ±20 V (VGS) and specifies operation with gate voltages as low as 4.5V. |
| 2 | D | passive | Drain terminal; continuous drain current is rated 160 A at TC=25℃ and pulsed drain current 450 A. |
| 3 | S | passive | Source terminal; continuous source current is rated 110 A (integral body diode) and pulsed source current 440 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 160 | A | VGS @ 10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 80 | A | VGS @ 10V, TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 450 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 580 | mJ | 1 | |||
| Avalanche Current | IAS | 60 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 87 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Drain to source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=30V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=24V, TJ=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 1.2 | 2.4 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 2.2 | 4.8 | mΩ | VGS=4.5V, ID=30A,TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 1.6 | mΩ | VGS=10V, ID=30A,TJ=25oC | 2 | ||
| Drain to source on state resistance | RDS(ON) | 2.5 | mΩ | VGS=10V, ID=30A,TJ=125oC | 2 | ||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.02 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Forward transconductance | Gfs | 73 | S | VDS=5V, ID=30A | 2 | ||
| Input capacitance | Ciss | 6272 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Output capacitance | Coss | 1022 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 718 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Turn on delay time | td(on) | 20 | ns | VDS=15V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) | 2 | ||
| Rising time | tr | 58 | ns | VDS=15V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) | 2 | ||
| Turn off delay time | td(off) | 158 | ns | VDS=15V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) | 2 | ||
| Fall time | tf | 77 | ns | VDS=15V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) | 2 | ||
| Total gate charge | Qg | 143 | nC | VDS=24V, VGS=10V, ID=30A, IG=5mA (note 4,5) | 2 | ||
| Gate-source charge | Qgs | 17 | nC | VDS=24V, VGS=10V, ID=30A, IG=5mA (note 4,5) | 2 | ||
| Gate-drain charge | Qgd | 43 | nC | VDS=24V, VGS=10V, ID=30A, IG=5mA (note 4,5) | 2 | ||
| Gate resistance | Rg | 4.2 | Ω | VDS=0V, Scan F mode | 2 | ||
| Continuous source current | IS | 110 | A | Integral reverse p-n Junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 440 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.4 | V | IS=45A, VGS=0V | 2 | ||
| Reverse recovery time | trr | 26 | ns | IS=30A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Reverse recovery charge | Qrr | 10 | nC | 2 | |||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 2.1 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
DMN3009SK3-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
dmn3009sk3-hxy-etched.step/dmn3009sk3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn3009sk3-hxy.step/dmn3009sk3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
52a175737d1e002a, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMN3009SK3-HXY
**HXY MOSFET** · MOSFETs · TO-252-2L
DMN3009SK3-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet rates gate-source voltage at ±20 V (VGS) and specifies operation with gate voltages as low as 4.5V. |
| 2 | D | passive | Drain terminal; continuous drain current is rated 160 A at TC=25℃ and pulsed drain current 450 A. |
| 3 | S | passive | Source terminal; continuous source current is rated 110 A (integral body diode) and pulsed source current 440 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | 160 | A | VGS @ 10V, TC=25℃ | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | 80 | A | VGS @ 10V, TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 450 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 580 | mJ | | 1 |
| Avalanche Current | IAS | | | 60 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 87 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Drain to source breakdown voltage | BVDSS | 30 | | | V | VGS=0V, ID=250uA | 2 |
| Drain to source leakage current | IDSS | | | 1 | uA | VDS=30V, VGS=0V | 2 |
| Drain to source leakage current | IDSS | | | 50 | uA | VDS=24V, TJ=125oC | 2 |
| Gate to source leakage current, forward | IGSS | | | 100 | nA | VGS=20V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS | -100 | | | nA | VGS=-20V, VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | 1.2 | | 2.4 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) | | 2.2 | 4.8 | mΩ | VGS=4.5V, ID=30A,TJ=25oC | 2 |
| Drain to source on state resistance | RDS(ON) | | 1.6 | | mΩ | VGS=10V, ID=30A,TJ=25oC | 2 |
| Drain to source on state resistance | RDS(ON) | | 2.5 | | mΩ | VGS=10V, ID=30A,TJ=125oC | 2 |
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | | 0.02 | | V/oC | ID=250uA, referenced to 25oC | 2 |
| Forward transconductance | Gfs | | 73 | | S | VDS=5V, ID=30A | 2 |
| Input capacitance | Ciss | | 6272 | | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output capacitance | Coss | | 1022 | | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse transfer capacitance | Crss | | 718 | | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Turn on delay time | td(on) | | 20 | | ns | VDS=15V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) | 2 |
| Rising time | tr | | 58 | | ns | VDS=15V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) | 2 |
| Turn off delay time | td(off) | | 158 | | ns | VDS=15V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) | 2 |
| Fall time | tf | | 77 | | ns | VDS=15V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) | 2 |
| Total gate charge | Qg | | 143 | | nC | VDS=24V, VGS=10V, ID=30A, IG=5mA (note 4,5) | 2 |
| Gate-source charge | Qgs | | 17 | | nC | VDS=24V, VGS=10V, ID=30A, IG=5mA (note 4,5) | 2 |
| Gate-drain charge | Qgd | | 43 | | nC | VDS=24V, VGS=10V, ID=30A, IG=5mA (note 4,5) | 2 |
| Gate resistance | Rg | | 4.2 | | Ω | VDS=0V, Scan F mode | 2 |
| Continuous source current | IS | | 110 | | A | Integral reverse p-n Junction diode in the MOSFET | 2 |
| Pulsed source current | ISM | | 440 | | A | | 2 |
| Diode forward voltage drop | VSD | | 1.4 | | V | IS=45A, VGS=0V | 2 |
| Reverse recovery time | trr | | 26 | | ns | IS=30A, VGS=0V, dIF/dt=100A/us | 2 |
| Reverse recovery charge | Qrr | | 10 | | nC | | 2 |
| Thermal Resistance Junction-Ambient | RθJA | | 62 | | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | 2.1 | | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `DMN3009SK3-HXY`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `dmn3009sk3-hxy-etched.step` / `dmn3009sk3-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn3009sk3-hxy.step` / `dmn3009sk3-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/dmn3009sk3-hxy-datasheet.pdf) (7 pp, sha256 `52a175737d1e002a`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmn3009sk3-hxy-datasheet.pdf)