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DMN2230U-HXY

HXY MOSFET · MOSFETs · SOT-23

DMN2230U-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the datasheet gives an absolute maximum gate-source voltage of ±12 V and specifies RDS(ON) at VGS = 2.5 V and 4.5 V.
2 D passive Drain of the N-channel MOSFET; the datasheet gives a drain-source voltage of 20 V, continuous drain current of 2.3 A and pulsed drain current of 16 A.
3 S passive Source of the N-channel MOSFET; the datasheet gives a diode forward current limit of 3.3 A for the source-drain body diode, with diode forward voltage of 1.2 V maximum at IS = 2.3 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 22 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.75 1.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance (VGS=2.5V) RDS(ON) 54 72 mΩ VGS=2.5V, ID=2.0A 2
Drain-Source On-State Resistance (VGS=4.5V) RDS(ON) 48 60 mΩ VGS=4.5V, ID=2.3A 2
Total Gate Charge Qg 2.9 5 nC VDS=10V,ID=2.3A, VGS=4.5V 2
Diode Forward Voltage VSD 0.75 1.2 V VGS=0V,IS=2.3A 2
Diode Forward Current IS 3.3 A 2
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current-Continuous ID 2.3 A 1
Drain Current-Pulsed IDM 16 A 1
Maximum Power Dissipation PD 0.9 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient θJA 139 ℃/W Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec 1

CAD (KiCad official)

  • Symbol: DMN2230U-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn2230u-hxy-etched.step / dmn2230u-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn2230u-hxy.step / dmn2230u-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 a0ce7937acc24b75, retrieved 2026-11-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF