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DMN2075UDW-7

Public Made by Adom

by adom

Diodes Incorporated MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN2075UDW-7

Diodes Incorporated · MOSFETs · SOT-363

DMN2075UDW-7 from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, internally common with the other drain pins; 20V V(BR)DSS, 2.8A continuous at VGS = 4.5V, TA = 25°C.
2 D passive Drain, internally common with the other drain pins; 20V V(BR)DSS, 2.8A continuous at VGS = 4.5V, TA = 25°C.
3 G input Gate; VGSS limit is ±8V, with threshold VGS(th) 0.4V to 1.0V at ID = 250μA.
4 S passive Source of the N-channel MOSFET; maximum continuous body diode current is 1.0A.
5 D passive Drain, internally common with the other drain pins; 20V V(BR)DSS, 2.8A continuous at VGS = 4.5V, TA = 25°C.
6 D passive Drain, internally common with the other drain pins; 20V V(BR)DSS, 2.8A continuous at VGS = 4.5V, TA = 25°C.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 20 V 2
Gate-Source Voltage VGSS -8 8 V 2
Continuous Drain Current, VGS=4.5V, steady state ID 2.8 A VGS = 4.5V, Steady State, TA = 25°C 2
Continuous Drain Current, VGS=4.5V, steady state ID 2.2 A VGS = 4.5V, Steady State, TA = 70°C 2
Continuous Drain Current, VGS=4.5V, t<5s ID 3.1 A VGS = 4.5V, t<5s, TA = 25°C 2
Continuous Drain Current, VGS=4.5V, t<5s ID 2.5 A VGS = 4.5V, t<5s, TA = 70°C 2
Continuous Drain Current, VGS=2.5V, steady state ID 2.6 A VGS = 2.5V, Steady State, TA = 25°C 2
Continuous Drain Current, VGS=2.5V, steady state ID 2.1 A VGS = 2.5V, Steady State, TA = 70°C 2
Continuous Drain Current, VGS=2.5V, t<5s ID 2.8 A VGS = 2.5V, t<5s, TA = 25°C 2
Continuous Drain Current, VGS=2.5V, t<5s ID 2.2 A VGS = 2.5V, t<5s, TA = 70°C 2
Pulsed Drain Current IDM 20 A 10μs pulse, Duty cycle = 1% 2
Maximum Continuous Body Diode Current IS 1 A 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Total Power Dissipation (Note 4) PD 0.5 W Note 4 2
Thermal Resistance, Junction to Ambient (Note 4), steady state RθJA 257 °C/W Note 4, Steady state 2
Thermal Resistance, Junction to Ambient (Note 4), t<5s RθJA 213 °C/W Note 4, t<5s 2
Total Power Dissipation (Note 5) PD 0.58 W Note 5 2
Thermal Resistance, Junction to Ambient (Note 5), steady state RθJA 221 °C/W Note 5, Steady state 2
Thermal Resistance, Junction to Ambient (Note 5), t<5s RθJA 183 °C/W Note 5, t<5s 2
Thermal Resistance, Junction to Case (Note 5) RθJC 65 °C/W Note 5 2
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 20V, VGS = 0V, TJ = 25°C 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±8V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 0.4 1 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(ON) 40 48 mΩ VGS = 4.5V, ID = 3A 2
Static Drain-Source On-Resistance RDS(ON) 45 59 mΩ VGS = 2.5V, ID = 2A 2
Static Drain-Source On-Resistance RDS(ON) 51 70 mΩ VGS = 1.8V, ID = 1A 2
Static Drain-Source On-Resistance RDS(ON) 68 100 mΩ VGS = 1.5V, ID = 1A 2
Diode Forward Voltage VSD 0.75 1 V VGS = 0V, IS = 1A 2
Forward Transfer Admittance /Yfs/ 13 S VDS = 5V, ID = 3A 2
Input Capacitance Ciss 594.3 pF VDS = 10V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 64.5 pF VDS = 10V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 57.7 pF VDS = 10V, VGS = 0V, f = 1.0MHz 2
Gate Resistance Rg 1.5 Ω VDS = 0V, VGS = 0V, f = 1MHz 2
Total Gate Charge Qg 7 nC VGS = 4.5V, VDS = 10V, ID = 3.6A 2
Gate-Source Charge Qgs 0.9 nC VGS = 4.5V, VDS = 10V, ID = 3.6A 2
Gate-Drain Charge Qgd 1.4 nC VGS = 4.5V, VDS = 10V, ID = 3.6A 2
Turn-On Delay Time tD(on) 7.4 ns VDD = 10V, VGS = 4.5V, RL = 2.78Ω, RG = 1.0Ω 2
Turn-On Rise Time tr 9.8 ns VDD = 10V, VGS = 4.5V, RL = 2.78Ω, RG = 1.0Ω 2
Turn-Off Delay Time tD(off) 28.1 ns VDD = 10V, VGS = 4.5V, RL = 2.78Ω, RG = 1.0Ω 2
Turn-Off Fall Time tf 6.7 ns VDD = 10V, VGS = 4.5V, RL = 2.78Ω, RG = 1.0Ω 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe. Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: DMN2075UDW-7
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: dmn2075udw-7-etched.step / dmn2075udw-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn2075udw-7.step / dmn2075udw-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 444a7a4a00e062e5, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF