component
DMN2065UW-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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DMN2065UW-HXY
HXY MOSFET · MOSFETs · SOT-323
DMN2065UW-HXY from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; absolute maximum gate-source voltage is ±12 V, and the part is specified for gate drive down to 2.5 V (RDS(on) given at VGS=2.5 V and 4.5 V). |
| 2 | D | passive | Drain of the MOSFET; absolute maximum drain-source voltage is 20 V and continuous drain current is 2 A. |
| 3 | S | passive | Source of the MOSFET; the datasheet states a maximum continuous drain-to-source diode forward current of 1.0 A and no other source-specific limit. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-323 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current-Continuous | ID | 2 | A | 1 | |||
| Maximum Power Dissipation | PD | 0.3 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Note 2) | θJA | 125 | ℃/W | 1 | |||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID =250μA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =18V,VGS = 0V | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS =±12V, VDS = 0V | 2 | |
| Gate threshold voltage (note2) | VGS(th) | 0.4 | 0.7 | 1 | V | VDS =VGS, ID =250μA | 2 |
| Drain-source on-resistance (note2), VGS=4.5V row | RDS(on) | 55 | mΩ | VGS =4.5V, ID =2.0A | 2 | ||
| Drain-source on-resistance (note2), VGS=2.5V row | RDS(on) | 85 | mΩ | VGS =2.5V, ID =0.3A | 2 | ||
| Maximum Continuous Drain to Source Diode Forward Current | IS | 1 | A | 2 | |||
| Diode forward voltage | VSD | 1.2 | V | IS=1.0A, VGS =0V | 2 | ||
| Input capacitance | Ciss | 300 | pF | VDS =10V,VGS =0V, f =1MHz | 2 | ||
| Output capacitance | Coss | 120 | pF | 2 | |||
| Reverse transfer capacitance | Crss | 80 | pF | 2 | |||
| Turn-on delay time | td(on) | 15 | nS | VGS=4.5V,VDS=10V, RL=5.1Ω,RG=5.1Ω | 2 | ||
| Turn-on rise time | tr | 85 | nS | 2 | |||
| Turn-off delay time | td(off) | 65 | nS | 2 | |||
| Turn-off fall time | tf | 27 | nS | 2 |
CAD (KiCad official)
- Symbol:
DMN2065UW-HXY - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
dmn2065uw-hxy-etched.step/dmn2065uw-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn2065uw-hxy.step/dmn2065uw-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
91cd9bd8e80eba38, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).