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DMN2056U-7-VB

Public Made by Adom

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VBsemi Elec MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsdmn2056u-7-vbfactory-2.0.0extractor-text

Verified DMN2056U-7-VB

by Ray · last 13 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

13 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • •array (skip): not an array of element pairs
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: DMN2056U-7-VB · SOT-23 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOT-23
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-u5rpacjx/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.7)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 17 kB, viewers/symbol.html 8 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ dmn2056u-7-vb.kicad_sym✓ dmn2056u-7-vb.kicad_mod✓ dmn2056u-7-vb.step
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DMN2056U-7-VB

VBsemi Elec · MOSFETs · SOT-23

DMN2056U-7-VB from VBsemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage is rated at VGS ±12 V absolute maximum, and RDS(on) is specified at VGS = 1.8 V, 2.5 V and 4.5 V.
2 S passive Source terminal; continuous source-drain diode current is rated at IS = 1.75 A (TC = 25 °C) with a body diode voltage of 1.2 V maximum at IS = 4 A.
3 D passive Drain terminal; drain-source voltage is rated at 20 V and continuous drain current at 6 A (package limited, TC = 25 °C).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 6 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 5.1 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID 5 A TJ = 150 °C, Tb,A = 25 °C, note c (t = 5 s) 1
Continuous Drain Current ID 4 A TJ = 150 °C, Tb,A = 70 °C, note c (t = 5 s) 1
Pulsed Drain Current IDM 20 A 1
Continuous Source-Drain Diode Current IS 1.75 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 1.04 A Tb,A = 25 °C, note c (t = 5 s) 1
Maximum Power Dissipation PD 2.1 W TC = 25 °C 1
Maximum Power Dissipation PD 1.3 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W Tb,A = 25 °C, note c (t = 5 s) 1
Maximum Power Dissipation PD 0.8 W Tb,A = 70 °C, note c (t = 5 s) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C 1
Maximum Junction-to-Ambient RthJA 80 100 °C/W t ≤ 5 s 1
Maximum Junction-to-Ambient (steady state, note d) RthJA 125 °C/W Steady state 1
Maximum Junction-to-Foot (Drain) RthJF 40 60 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS 20 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 0.45 1 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±8 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 20 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) 20 A VDS ≤ 5 V, VGS = 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.022 Ω VGS = 4.5 V, ID = 5.0 A 2
Drain-Source On-State Resistance RDS(on) 0.028 Ω VGS = 2.5 V, ID = 4.7 A 2
Drain-Source On-State Resistance RDS(on) 0.039 Ω VGS = 1.8 V, ID = 4.3 A 2
Total Gate Charge Qg 12 18 nC VDS = 10 V, VGS = 5 V, ID = 5.0 A 2
Total Gate Charge Qg 8.8 14 nC VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 2
Gate Resistance Rg 0.5 2.4 4.8 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 8 16 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 17 26 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 31 47 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 8 16 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 5 10 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω 2
Rise Time tr 13 20 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 21 32 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω 2
Fall Time tf 6 12 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω 2
Pulse Diode Forward Current ISM 20 A 2
Body Diode Voltage VSD 0.75 1.2 V IS = 4 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 12 20 ns IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 5 10 nC IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Gate-Source Threshold Voltage Temperature Coefficient ΔVGS(th)/ΔTJ -2.6 mV/°C 2
VDS Temperature Coefficient ΔVDS/ΔTJ 25 mV/°C ID = 250 µA 2
Forward Transconductance gfs 24 S VDS = 10 V, ID = 5.0 A 2
Input Capacitance Ciss 865 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 105 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 55 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 1.1 nC VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 2
Gate-Drain Charge Qgd 0.7 nC VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 2
Reverse Recovery Fall Time ta 7 ns IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Rise Time tb 5 ns IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: DMN2056U-7-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23, generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: dmn2056u-7-vb-etched.step / dmn2056u-7-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn2056u-7-vb.step / dmn2056u-7-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 47509acd583de9ca, retrieved 2026-11-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF