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Contents

README

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DMN2056U-13

Diodes Incorporated · MOSFETs · SOT-23

DMN2056U-13 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, bottom-left in the top view; gate-source voltage is rated at ±8V maximum, with a gate threshold of 0.4V to 1.0V at 250µA.
2 S passive Source terminal, bottom-right in the top view; maximum body diode forward current is 1.0A.
3 D passive Drain terminal, top-center in the top view; drain-source voltage is rated at 20V maximum, with continuous drain current of 4.0A at TA = +25°C and VGS = 4.5V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250µA 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20V, VGS = 0V 3
Gate-Source Leakage IGSS -100 100 nA VGS = ±8V, VDS = 0V 3
Gate Threshold Voltage VGS(th) 0.4 0.6 1 V VDS = VGS, ID = 250µA 3
Static Drain-Source On-Resistance RDS(on) 30 38 mΩ VGS = 4.5V, ID = 3.6A 3
Static Drain-Source On-Resistance RDS(on) 34 45 mΩ VGS = 2.5V, ID = 3.1A 3
Static Drain-Source On-Resistance RDS(on) 52 85 mΩ VGS = 1.5V, ID = 2.0A 3
Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 1A 3
Drain-Source Voltage VDSS 20 V 2
Gate-Source Voltage VGSS -8 8 V 2
Continuous Drain Current (steady state) ID 4 A VGS = 4.5V, steady state, TA = +25°C (Note 6) 2
Continuous Drain Current (steady state) ID 3.2 A VGS = 4.5V, steady state, TA = +70°C (Note 6) 2
Maximum Body Diode Forward Current IS 1 A Note 6 2
Pulsed Drain Current IDM 22 A 10µs pulse, duty cycle = 1% 2
Power Dissipation PD 0.66 W Note 5: FR-4 PCB, 2oz copper, minimum recommended pad layout, steady state 2
Thermal Resistance, Junction to Ambient RθJA 192 °C/W Note 5: FR-4 PCB, 2oz copper, minimum recommended pad layout, steady state 2
Power Dissipation PD 0.94 W Note 6: FR-4 PCB, 2oz copper, thermal bias to bottom layer 1 inch square copper plate, steady state 2
Thermal Resistance, Junction to Ambient RθJA 136 °C/W Note 6: FR-4 PCB, 2oz copper, thermal bias to bottom layer 1 inch square copper plate, steady state 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Thermal Resistance, Junction to Ambient (transient curve basis) RθJA 189 °C/W Figure 13 note: RθJA used to scale transient thermal response r(t) 6

CAD (KiCad official)

  • Symbol: DMN2056U-13
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn2056u-13-etched.step / dmn2056u-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn2056u-13.step / dmn2056u-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 4bf71d7780cec6eb, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF