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DMN2053UW-HXY

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HXY MOSFET MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN2053UW-HXY

HXY MOSFET · MOSFETs · SOT-323

DMN2053UW-HXY from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel enhancement-mode MOSFET; the datasheet limits gate-source voltage VGS to ±12 V.
2 D passive Drain of the MOSFET; the datasheet rates drain-source voltage VDS at 20 V and continuous drain current ID at 2 A.
3 S passive Source of the MOSFET; the reference terminal for VGS and VDS, with the body diode forward current rated at 1.0 A maximum.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID =250μA 2
Zero gate voltage drain current IDSS 1 µA VDS =18V,VGS = 0V 2
Gate-body leakage current IGSS -100 100 nA VGS =±12V, VDS = 0V 2
Gate threshold voltage (note2) VGS(th) 0.4 0.7 1 V VDS =VGS, ID =250μA 2
Drain-source on-resistance (note2) RDS(on) 85 mΩ VGS =2.5V, ID =0.3A 2
Maximum Continuous Drain to Source Diode Forward Current IS 1 A 2
Diode forward voltage VSD 1.2 V IS=1.0A, VGS =0V 2
Drain-Source Voltage VDS 20 V TA=25℃ 1
Gate-Source Voltage VGS -12 12 V TA=25℃ 1
Drain Current-Continuous ID 2 A TA=25℃ 1
Maximum Power Dissipation PD 0.3 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient (Note 2) θJA 125 ℃/W Surface mounted on FR4 board using the minimum recommended pad size (Note 1) 1

CAD (KiCad official)

  • Symbol: DMN2053UW-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: dmn2053uw-hxy-etched.step / dmn2053uw-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn2053uw-hxy.step / dmn2053uw-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 b94852308bf54441, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF