# DMN2029USD-HXY

**HXY MOSFET** · MOSFETs · SOP-8

DMN2029USD-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of channel 1 (N-channel MOSFET), rated for VDS of 20 V and 8 A continuous drain current. |
| 2 | G1 | input | Gate of channel 1; gate-source voltage is limited to ±12 V, and RDS(on) is specified below 20 mΩ at VGS = 4.5 V. |
| 3 | S2 | passive | Source terminal of channel 2 (N-channel MOSFET), rated for VDS of 20 V and 8 A continuous drain current. |
| 4 | G2 | input | Gate of channel 2; gate-source voltage is limited to ±12 V. |
| 5 | D2 | passive | Drain terminal of channel 2 (N-channel MOSFET), rated for drain-source voltage of 20 V. |
| 6 | D2 | passive | Drain terminal of channel 2, internally tied to pin 5; rated for drain-source voltage of 20 V. |
| 7 | D1 | passive | Drain terminal of channel 1 (N-channel MOSFET), rated for drain-source voltage of 20 V. |
| 8 | D1 | passive | Drain terminal of channel 1, internally tied to pin 7; rated for drain-source voltage of 20 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Gate Leakage Current | IGSS | -100 |  | 100 | nA | VGS = ±12V, VDS = 0V | 2 |
| Drain Cut-off Current | IDSS |  |  | 1 | µA | VDS = 20V, VGS = 0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.7 | 1 | V | VGS = VDS, ID = 250µA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 13 | 20 | mΩ | VGS = 4.5V, ID =5A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 18 | 30 | mΩ | VGS = 2.5V, ID = 4.7A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 28 | 57 | mΩ | VGS = 1.8V, ID = 4.3A | 2 |
| Body Diode Voltage | VSD |  |  | 1.2 | V | IS=4A, VGS = 0V | 2 |
| Continuous Source Current | IS |  |  | 8 | A |  | 2 |
| Drain-Source Voltage | VDS |  |  | 20 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V | TC=25℃ | 1 |
| Drain Current-Continuous | ID |  |  | 8 | A | TC=25℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 28 | A | TC=25℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 2.25 | W | TC=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 80 | ℃/W | Note 2: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 |

## CAD (KiCad official)

- Symbol: `DMN2029USD-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `dmn2029usd-hxy-etched.step` / `dmn2029usd-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn2029usd-hxy.step` / `dmn2029usd-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/dmn2029usd-hxy-datasheet.pdf) (6 pp, sha256 `3c3759d482d4ab6b`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmn2029usd-hxy-datasheet.pdf)