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DMN2028USS-13

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN2028USS-13

Diodes Incorporated · MOSFETs · SO-8

DMN2028USS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied to the body diode anode; continuous source current (body diode) is rated 6.0A.
2 S passive Source of the N-channel MOSFET, internally common with the other source pins.
3 S passive Source of the N-channel MOSFET, internally common with the other source pins.
4 G input Gate, protected by an internal gate protection diode (ESD protected to 2kV), with a threshold of 0.6V min to 1.3V max at ID=250µA.
5 D passive Drain of the 20V N-channel MOSFET, rated 9.8A continuous at TA=+25°C (Note 6).
6 D passive Drain of the 20V N-channel MOSFET, internally common with the other drain pins.
7 D passive Drain of the 20V N-channel MOSFET, internally common with the other drain pins.
8 D passive Drain of the 20V N-channel MOSFET, internally common with the other drain pins.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250μA 4
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 20V, VGS = 0V 4
Gate-Source Leakage IGSS -10 10 μA VGS = ±12V, VDS = 0V 4
Gate Threshold Voltage VGS(th) 0.6 1 1.3 V VDS = VGS, ID = 250μA 4
Static Drain-Source On-Resistance RDS(ON) 11 20 mΩ VGS = 4.5V, ID = 9.4A 4
Static Drain-Source On-Resistance RDS(ON) 15 28 mΩ VGS = 2.5V, ID = 8.3A 4
Diode Forward Voltage VSD 0.7 1.3 V VGS = 0V, IS = 1.3A 4
Drain-Source voltage VDSS 20 V 2
Gate-Source voltage VGS 12 V 2
Continuous Drain current ID 9.8 A VGS = 4.5V (Note 6) 2
Continuous Drain current ID 7.9 A VGS = 4.5V; TA = +70°C (Note 6) 2
Continuous Drain current ID 7.3 A VGS = 4.5V (Note 5) 2
Pulsed Drain current IDM 45 A VGS = 4.5V (Note 7) 2
Continuous Source current (Body diode) IS 6 A (Note 6) 2
Pulsed Source current (Body diode) ISM 45 A (Note 7) 2
Power dissipation PD 1.56 W (Note 5) 2
Power dissipation PD 2.81 W (Note 6) 2
Linear derating factor 12.5 mW/°C (Note 5) 2
Linear derating factor 22.5 mW/°C (Note 6) 2
Thermal Resistance, Junction to Ambient RθJA 80 °C/W (Note 5) 2
Thermal Resistance, Junction to Ambient RθJA 44.5 °C/W (Note 6) 2
Thermal Resistance, Junction to Lead RθJL 37 °C/W (Note 8) 2
Operating and storage temperature range TJ, TSTG -55 150 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections: See Diagram Below  Terminals: Finish, Matte Tin annealed over Copper leadframe. 1

CAD (KiCad official)

  • Symbol: DMN2028USS-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dmn2028uss-13-etched.step / dmn2028uss-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn2028uss-13.step / dmn2028uss-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 76d8ab52e2457692, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF