component
DMN2024U-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
DMN2024U-13
Diodes Incorporated · MOSFETs · SOT-23-3
DMN2024U-13 from Diodes Incorporated, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD-protected through an internal gate protection diode with a 22K resistor; VGSS rating is ±10 V and threshold is 0.5 to 0.9 V at ID = 250µA. |
| 2 | S | passive | Source terminal; the body diode conducts from source to drain with a maximum continuous forward current of 2.2 A. |
| 3 | D | passive | Drain terminal; drain-source voltage rating is 20 V with continuous drain current up to 6.8 A at TA = +25°C and VGS = 4.5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20V, VGS = 0V, TJ = +25°C | 2 | ||
| Gate-Source Leakage | IGSS | 10 | µA | VGS = ±8V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 0.5 | 0.9 | V | VDS = VGS, ID = 250µA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 16 | 25 | mΩ | VGS = 4.5V, ID = 6.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 18.5 | 29 | mΩ | VGS = 2.5V, ID = 5.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 23 | 36 | mΩ | VGS = 1.8V, ID = 3.5A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS = 0V, ID = 5A | 2 | |
| Drain-Source Voltage | VDSS | 20 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -10 | 10 | V | TA = +25°C | 2 | |
| Continuous Drain Current | ID | 6.8 | A | VGS = 4.5V, Steady State, TA = +25°C, Note 6 | 2 | ||
| Continuous Drain Current | ID | 5.5 | A | VGS = 4.5V, Steady State, TA = +70°C, Note 6 | 2 | ||
| Maximum Continuous Body Diode Forward Current | IS | 2.2 | A | Note 6 | 2 | ||
| Pulsed Drain Current | IDM | 45 | A | 10µs pulse, duty cycle = 1% | 2 | ||
| Total Power Dissipation | PD | 0.8 | W | Note 5, minimum recommended pad layout | 2 | ||
| Total Power Dissipation | PD | 1.4 | W | Note 6, 1"x1" FR-4 PCB 2oz copper | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 159 | °C/W | Steady State, Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 92 | °C/W | Steady State, Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Input Capacitance | Ciss | 647 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 78 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 38 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 | ||
| Gate Resistance | Rg | 628 | Ω | VDS = 0V, VGS = 0V, f = 1MHz | 2 | ||
| Total Gate Charge | Qg | 7.1 | nC | VGS = 4.5V, VDS = 10V, ID = 6.5A | 2 | ||
| Gate-Source Charge | Qgs | 0.9 | nC | VGS = 4.5V, VDS = 10V, ID = 6.5A | 2 | ||
| Gate-Drain Charge | Qgd | 0.7 | nC | VGS = 4.5V, VDS = 10V, ID = 6.5A | 2 | ||
| Turn-On Delay Time | tD(ON) | 98 | ns | VDS = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω, ID = 1A | 2 | ||
| Turn-On Rise Time | tR | 140 | ns | VDS = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω, ID = 1A | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 1024 | ns | VDS = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω, ID = 1A | 2 | ||
| Turn-Off Fall Time | tF | 434 | ns | VDS = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω, ID = 1A | 2 | ||
| Reverse Recovery Time | tRR | 245 | ns | IF = 1.0A, di/dt = 100A/µs | 2 | ||
| Reverse Recovery Charge | QRR | 149 | nC | IF = 1.0A, di/dt = 100A/µs | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminals: FinishMatte Tin Annealed over Copper Leadframe. | 1 |
CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol:
DMN2024U-13 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3, generated on the KiCad land (body 1.3 x 2.9 mm, terminals on the pads, 1.025 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files:
dmn2024u-13-etched.step/dmn2024u-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn2024u-13.step/dmn2024u-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
6c5c4746041ac5af, retrieved 2026-11-13, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).