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DMN2020LSN-7-VB
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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMN2020LSN-7-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
DMN2020LSN-7-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit ±20 V with threshold VGS(th) of 0.7 V min to 2.0 V max at ID = 250 µA. |
| 2 | S | passive | Source; continuous source-drain body diode current 1.4 A at TC = 25 °C. |
| 3 | D | passive | Drain; drain-source voltage 30 V max, continuous drain current 6.5 A at TC = 25 °C and pulsed 25 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 0.7 | 2 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 10 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.03 | Ω | VGS = 10 V, ID = 3.2 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.033 | Ω | VGS = 4.5 V, ID = 2.8 A | 2 | ||
| Total Gate Charge | Qg | 4.5 | 6.7 | nC | VDS = 15 V, VGS = 10 V, ID = 3.4 A | 2 | |
| Total Gate Charge | Qg | 2.1 | 3.2 | nC | VDS = 15 V, VGS = 4.5 V, ID = 3.4 A | 2 | |
| Gate Resistance | Rg | 0.8 | 4.4 | 8.8 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 12 | 20 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 50 | 75 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 12 | 20 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 22 | 35 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 5 | 10 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 12 | 20 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 10 | 15 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 5 | 10 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 1.4 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 15 | A | 2 | |||
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 2.7 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 10 | 20 | ns | IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 5 | 10 | nC | IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Drain-Source Voltage | VDS | 30 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Pulsed Drain Current | IDM | 25 | A | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Peak Temperature | 260 | °C | 1 | ||||
| Maximum Junction-to-Ambient | RthJA | 90 | 115 | °C/W | t ≤ 5 s, surface mounted on 1" x 1" FR4 | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 60 | 75 | °C/W | Steady State | 1 | |
| Forward Transconductance | gfs | 11 | S | VDS = 15 V, ID = 4.8 A | 2 | ||
| Input Capacitance | Ciss | 335 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 45 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 17 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 |
CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol:
DMN2020LSN-7-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files:
dmn2020lsn-7-vb-etched.step/dmn2020lsn-7-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn2020lsn-7-vb.step/dmn2020lsn-7-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
132df5a61557b091, retrieved 2026-11-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).
# DMN2020LSN-7-VB
**VBsemi Elec** · MOSFETs · SOT-23(TO-236)
DMN2020LSN-7-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit ±20 V with threshold VGS(th) of 0.7 V min to 2.0 V max at ID = 250 µA. |
| 2 | S | passive | Source; continuous source-drain body diode current 1.4 A at TC = 25 °C. |
| 3 | D | passive | Drain; drain-source voltage 30 V max, continuous drain current 6.5 A at TC = 25 °C and pulsed 25 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 30 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 0.7 | | 2 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 10 | | | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.03 | Ω | VGS = 10 V, ID = 3.2 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.033 | Ω | VGS = 4.5 V, ID = 2.8 A | 2 |
| Total Gate Charge | Qg | | 4.5 | 6.7 | nC | VDS = 15 V, VGS = 10 V, ID = 3.4 A | 2 |
| Total Gate Charge | Qg | | 2.1 | 3.2 | nC | VDS = 15 V, VGS = 4.5 V, ID = 3.4 A | 2 |
| Gate Resistance | Rg | 0.8 | 4.4 | 8.8 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | 12 | 20 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 50 | 75 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 12 | 20 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 22 | 35 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) | | 5 | 10 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 12 | 20 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 10 | 15 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 5 | 10 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Continuous Source-Drain Diode Current | IS | | | 1.4 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM | | | 15 | A | | 2 |
| Body Diode Voltage | VSD | | 0.8 | 1.2 | V | IS = 2.7 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr | | 10 | 20 | ns | IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 5 | 10 | nC | IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA = 25 °C | 1 |
| Pulsed Drain Current | IDM | | | 25 | A | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Soldering Peak Temperature | | | | 260 | °C | | 1 |
| Maximum Junction-to-Ambient | RthJA | | 90 | 115 | °C/W | t ≤ 5 s, surface mounted on 1" x 1" FR4 | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF | | 60 | 75 | °C/W | Steady State | 1 |
| Forward Transconductance | gfs | | 11 | | S | VDS = 15 V, ID = 4.8 A | 2 |
| Input Capacitance | Ciss | | 335 | | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 45 | | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 17 | | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 |
## CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol: `DMN2020LSN-7-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files: `dmn2020lsn-7-vb-etched.step` / `dmn2020lsn-7-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn2020lsn-7-vb.step` / `dmn2020lsn-7-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/dmn2020lsn-7-vb-datasheet.pdf) (9 pp, sha256 `132df5a61557b091`, retrieved 2026-11-13, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).
[Datasheet PDF](docs/dmn2020lsn-7-vb-datasheet.pdf)