component
DMN2016UTS-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| dmn2016uts-hxy-etched.glb | 7d ago |
| dmn2016uts-hxy-etched.step | 7d ago |
| dmn2016uts-hxy-hero.glb | 7d ago |
| dmn2016uts-hxy-hero.overlay.json | 7d ago |
| dmn2016uts-hxy.glb | 7d ago |
| dmn2016uts-hxy.kicad_mod | 7d ago |
| dmn2016uts-hxy.kicad_sym | 7d ago |
| dmn2016uts-hxy.lbr | 7d ago |
| dmn2016uts-hxy.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
DMN2016UTS-HXY
HXY MOSFET · MOSFETs · TSSOP-8
DMN2016UTS-HXY from HXY MOSFET, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1 | passive | Drain of N-channel MOSFET 1 (pin 1 marked), part of a 20V, 7.5A dual MOSFET. |
| 2 | S1 | passive | Source of N-channel MOSFET 1. |
| 3 | S1 | passive | Source of N-channel MOSFET 1, internally the same net as pin 2. |
| 4 | G1 | input | Gate of N-channel MOSFET 1, with an absolute maximum gate-source voltage of ±10V. |
| 5 | G2 | input | Gate of N-channel MOSFET 2, with an absolute maximum gate-source voltage of ±10V. |
| 6 | S2 | passive | Source of N-channel MOSFET 2. |
| 7 | S2 | passive | Source of N-channel MOSFET 2, internally the same net as pin 6. |
| 8 | D2 | passive | Drain of N-channel MOSFET 2. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TSSOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -10 | 10 | V | 1 | ||
| Drain Current-Continuous | ID | 7.5 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | 24 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 111 | ℃/W | Note 2 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=16V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±8V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 11.5 | 13 | mΩ | VGS=4.5V, ID=4.5A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 14 | 16 | mΩ | VGS=2.5V, ID=3.5A | 2 | |
| Diode Forward Voltage | VSD | 0.75 | 1.2 | V | VGS=0V,IS=1.7A | 2 | |
| Diode Forward Current | IS | 7 | A | Note 2 | 2 |
CAD (KiCad official)
- Symbol:
DMN2016UTS-HXY - Footprint:
Package_SO:TSSOP-8_3x3mm_P0.65mm - 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files:
dmn2016uts-hxy-etched.step/dmn2016uts-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn2016uts-hxy.step/dmn2016uts-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
3dbf003f943be041, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).