component
DMN2016UTS-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDMN2016UTS-13
Diodes Incorporated · MOSFETs · TSSOP-8
DMN2016UTS-13 from Diodes Incorporated, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain connection, tied internally to D2 (pin 8) per the internal schematic; VDSS 20 V max. |
| 2 | S1 | passive | Source of MOSFET 1; continuous drain current 8.58 A at TA = 25°C. |
| 3 | S1 | passive | Source of MOSFET 1, same net as pin 2; continuous drain current 8.58 A at TA = 25°C. |
| 4 | G1 | input | Gate of MOSFET 1 with ESD protection to 2 kV; VGSS ±8 V max, threshold 0.4 to 1.0 V. |
| 5 | G2 | input | Gate of MOSFET 2 with ESD protection to 2 kV; VGSS ±8 V max, threshold 0.4 to 1.0 V. |
| 6 | S2 | passive | Source of MOSFET 2, same net as pin 7; continuous drain current 8.58 A at TA = 25°C. |
| 7 | S2 | passive | Source of MOSFET 2; continuous drain current 8.58 A at TA = 25°C. |
| 8 | D | passive | Drain connection, tied internally to D1 (pin 1) per the internal schematic; VDSS 20 V max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSSOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | 1 | |||
| Gate-Source Voltage | VGSS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | 8.58 | A | Steady state, TA = 25°C (Note 3) | 1 | ||
| Continuous Drain Current | ID | 5.73 | A | Steady state, TA = 85°C (Note 3) | 1 | ||
| Pulsed Drain Current | IDM | 36 | A | Repetitive rating, pulse width limited by junction temperature (Note 4) | 1 | ||
| Power Dissipation | PD | 0.88 | W | Device mounted on FR-4 PCB, minimum recommended pad layout (Note 3) | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | TJ = 25°C, VDS = 20V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -10 | 10 | μA | VGS = ±8V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.72 | 1 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 14.5 | mΩ | VGS = 4.5V, ID = 9.4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 13 | 16.5 | mΩ | VGS = 2.5V, ID = 8.3A | 2 | |
| Diode Forward Voltage | VSD | 0.65 | 1.2 | V | VGS = 0V, IS = 1.3A | 2 | |
| Thermal Resistance, Junction to Ambient | RθJA | 141.57 | °C/W | TA = 25°C (Note 3) | 1 |
CAD (KiCad official)
- Symbol:
DMN2016UTS-13 - Footprint:
Package_SO:TSSOP-8_3x3mm_P0.65mm - 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files:
dmn2016uts-13-etched.step/dmn2016uts-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn2016uts-13.step/dmn2016uts-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
5c341694428299e5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).