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Contents

README

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DMN2009LSS-13-JSM

JSMSEMI · MOSFETs · SOP-8

DMN2009LSS-13-JSM from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, pin 1 at the dot-marked corner of the SOP8 package.
2 S passive Source of the N-channel MOSFET.
3 S passive Source of the N-channel MOSFET.
4 G input Gate of the N-channel MOSFET; VGSS is ±20 V max and threshold is 1.0 to 3.0 V at ID=250uA.
5 D passive Drain of the N-channel MOSFET; VDSS is 30 V max.
6 D passive Drain of the N-channel MOSFET; VDSS is 30 V max.
7 D passive Drain of the N-channel MOSFET; VDSS is 30 V max.
8 D passive Drain of the N-channel MOSFET; VDSS is 30 V max.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V TA=25℃ 1
Gate-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID 15 A TA=25℃, VGS=10V 1
Continuous Drain Current ID 12 A TA=70℃ 1
Pulsed Drain Current IDM 40 A 1
Continuous Source Current (Diode Conduction) IS 2 A 1
Power Dissipation PD 3 W TA=25℃ 1
Power Dissipation PD 2.1 W TA=70℃ 1
Operation Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Thermal Resistance Junction to Ambient RθJA 85 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250uA 2
Gate Threshold Voltage VGS(th) 1 1.5 3 V VDS=VGS, ID=250uA 2
Gate Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=20V, VGS=0 2
Zero Gate Voltage Drain Current IDSS 5 uA VDS=20V, VGS=0, TJ=55℃ 2
Drain-Source On-Resistance RDS(ON) 6.5 8 mΩ VGS=10V, ID=10A 2
Drain-Source On-Resistance RDS(ON) 10 18 mΩ VGS=4.5V, ID=8A 2
Diode Forward Voltage VSD 0.71 1 V IS=1.0A, VGS=0V 2
Total Gate Charge Qg 16 20.8 nC VDS=15V, VGS=4.5V, ID=14A 2
Gate-Source Charge Qgs 5 6.5 nC 2
Gate-Drain Charge Qgd 3 3.9 nC 2
Turn-On Time (delay) Td(on) 17 34 nS VDS=15V, ID=14A, VGEN=10V, RG=6Ω 2
Turn-On Rise Time Tr 5 10 nS 2
Turn-Off Time (delay) Td(off) 50 100 nS 2
Turn-Off Fall Time Tf 10 20 nS 2
Input Capacitance Ciss 986 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 325 pF 2
Reverse Transfer Capacitance Crss 185 pF 2

CAD (KiCad official)

  • Symbol: DMN2009LSS-13-JSM
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: dmn2009lss-13-jsm-etched.step / dmn2009lss-13-jsm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn2009lss-13-jsm.step / dmn2009lss-13-jsm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (5 pp, sha256 07e12bf40a453fc4, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF