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DMN2004K-7

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Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN2004K-7

Diodes Incorporated · MOSFETs · SOT-23

DMN2004K-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, ESD protected up to 2kV by an internal gate protection diode, with VGSS rated ±8V and threshold VGS(th) 0.5V to 1.0V.
2 S passive Source terminal of the N-channel MOSFET, with continuous source current IS of 0.5A max.
3 D passive Drain terminal of the N-channel MOSFET, rated VDSS 20V with ID of 630mA at VGS = 4.5V (TA = +25°C) and pulsed IDM of 1.5A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 20 V 2
Gate-Source Voltage VGSS -8 8 V 2
Drain Current, steady state, TA = +25°C ID 630 mA VGS = 4.5V, steady state, TA = +25°C (Note 5) 2
Drain Current, steady state, TA = +85°C ID 450 mA VGS = 4.5V, steady state, TA = +85°C (Note 5) 2
Drain Current, steady state, TA = +25°C ID 410 mA VGS = 1.8V, steady state, TA = +25°C (Note 5) 2
Drain Current, steady state, TA = +85°C ID 300 mA VGS = 1.8V, steady state, TA = +85°C (Note 5) 2
Pulsed Drain Current IDM 1.5 A Pulse width ≤ 10µs, duty cycle ≤ 1% (Note 6) 2
Total Power Dissipation PD 350 mW Device mounted on FR-4 PCB, minimum recommended pad layout, single sided (Note 5) 2
Thermal Resistance, Junction to Ambient RθJA 357 °C/W Device mounted on FR-4 PCB, minimum recommended pad layout, single sided (Note 5) 2
Operating and Storage Temperature Range TJ, TSTG -65 150 °C 2
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 10µA 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 16V, VGS = 0V 3
Gate-Source Leakage IGSS -1 1 µA VGS = ±4.5V, VDS = 0V 3
Gate Threshold Voltage VGS(th) 0.5 1 V VDS = VGS, ID = 250µA 3
Static Drain-Source On-Resistance RDS(on) 0.4 0.55 Ω VGS = 4.5V, ID = 540mA 3
Static Drain-Source On-Resistance RDS(on) 0.5 0.7 Ω VGS = 2.5V, ID = 500mA 3
Static Drain-Source On-Resistance RDS(on) 0.7 0.9 Ω VGS = 1.8V, ID = 350mA 3
Forward Transfer Admittance /Yfs/ 200 ms VDS = 10V, ID = 0.2A 3
Source Current IS 0.5 A 3
Diode Forward Voltage VSD 0.6 1 V VGS = 0V, IS = 500mA 3
Input Capacitance Ciss 150 pF VDS = 16V, VGS = 0V, f = 1.0MHz 3
Output Capacitance Coss 25 pF VDS = 16V, VGS = 0V, f = 1.0MHz 3
Reverse Transfer Capacitance Crss 20 pF VDS = 16V, VGS = 0V, f = 1.0MHz 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminals: Finish, Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: DMN2004K-7
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn2004k-7-etched.step / dmn2004k-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn2004k-7.step / dmn2004k-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 1d116ab210a1d96b, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF