component
DMN2004DWK-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SC-70-6(SOT-363). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDMN2004DWK-7
Diodes Incorporated · MOSFETs · SC-70-6(SOT-363)
DMN2004DWK-7 from Diodes Incorporated, in a SC-70-6(SOT-363). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2 (N-channel), bottom-left pin in the top view. |
| 2 | G2 | input | Gate of MOSFET 2, ESD protected to 2kV, with threshold VGS(TH) 0.5 to 1.0V and absolute maximum VGSS of ±8V. |
| 3 | D1 | passive | Drain of MOSFET 1, rated VDSS 20V and ID 540mA continuous at TA = +25°C. |
| 4 | S1 | passive | Source of MOSFET 1 (N-channel), top-right pin in the top view. |
| 5 | G1 | input | Gate of MOSFET 1, ESD protected to 2kV, with threshold VGS(TH) 0.5 to 1.0V and absolute maximum VGSS of ±8V. |
| 6 | D2 | passive | Drain of MOSFET 2, rated VDSS 20V and ID 540mA continuous at TA = +25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SC-70-6(SOT-363) |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | 2 | |||
| Gate-Source Voltage | VGSS | -8 | 8 | V | 2 | ||
| Drain Current (steady state) | ID | 540 | mA | Steady state, TA = +25°C | 2 | ||
| Drain Current (steady state) | ID | 390 | mA | Steady state, TA = +85°C | 2 | ||
| Pulsed Drain Current | IDM | 1.5 | A | 2 | |||
| Total Power Dissipation | PD | 200 | mW | Device mounted on FR-4 PCB (Note 5) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 625 | °C/W | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 10µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 16V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -1 | 1 | µA | VGS = ±4.5V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 0.5 | 1 | V | VDS = VGS, ID = 250µA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.4 | 0.55 | Ω | VGS = 4.5V, ID = 540mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.5 | 0.7 | Ω | VGS = 2.5V, ID = 500mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.7 | 0.9 | Ω | VGS = 1.8V, ID = 350mA | 2 | |
| Forward Transfer Admittance | /Yfs/ | 200 | mS | VDS = 10V, ID = 0.2A | 2 | ||
| Diode Forward Voltage | VSD | 0.5 | 1.4 | V | VGS = 0V, IS = 115mA | 2 | |
| Input Capacitance | Ciss | 36 | 150 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz | 2 | |
| Output Capacitance | Coss | 5.7 | 25 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 4.2 | 20 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz | 2 |
CAD (KiCad official)
- Symbol:
DMN2004DWK-7 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SC-70-6(SOT-363) (KiCad packages3D, STEP)
- 3D model files:
dmn2004dwk-7-etched.step/dmn2004dwk-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn2004dwk-7.step/dmn2004dwk-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
cdb89efea7c5eb7e, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).