component
DMN10H700S-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMN10H700S-7
Diodes Incorporated · MOSFETs · SOT-23
DMN10H700S-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS(TH) 2.0 to 4.0 V (2.7 V typ) at ID = 250µA and an absolute maximum VGSS of ±20 V. |
| 2 | S | passive | Source; the body diode runs from source to drain, with maximum continuous body diode current IS of 0.6 A. |
| 3 | D | passive | Drain; VDSS is 100 V and continuous drain current is 0.70 A at TA = +25°C (VGS = 10 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA = +25°C | 2 | |
| Continuous Drain Current | ID | 0.7 | A | VGS = 10V, steady state, TA = +25°C (Note 6) | 2 | ||
| Continuous Drain Current | ID | 0.56 | A | VGS = 10V, steady state, TA = +70°C (Note 6) | 2 | ||
| Pulsed Drain Current | IDM | 2.5 | A | 10μs Pulse, Duty Cycle ≦1% | 2 | ||
| Maximum Body Diode Continuous Current | IS | 0.6 | A | Note 6 | 2 | ||
| Total Power Dissipation | PD | 0.4 | W | Note 5 | 2 | ||
| Total Power Dissipation | PD | 0.5 | W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 303 | °C/W | Steady state (Note 5) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 239 | °C/W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 88 | °C/W | Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 2.7 | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 540 | 700 | mΩ | VGS = 10V, ID = 1.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 550 | 900 | mΩ | VGS = 6.0V, ID = 1.0A | 2 | |
| Diode Forward Voltage | VSD | 0.9 | 1.1 | V | VGS = 0V, IS = 1.5A | 2 | |
| Input Capacitance | Ciss | 235 | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 7 | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 5 | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 | ||
| Gate Resistance | RG | 1.9 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 4.6 | nC | VDS = 50V, VGS = 10V, ID = 1.0A | 2 | ||
| Gate-Source Charge | Qgs | 1.1 | nC | VDS = 50V, VGS = 10V, ID = 1.0A | 2 | ||
| Gate-Drain Charge | Qgd | 1.6 | nC | VDS = 50V, VGS = 10V, ID = 1.0A | 2 | ||
| Turn-On Delay Time | tD(ON) | 2.5 | ns | VDS = 50V, ID = 1.0A, VGS = 10V, RG = 6.0Ω | 2 | ||
| Turn-On Rise Time | tR | 1.1 | ns | VDS = 50V, ID = 1.0A, VGS = 10V, RG = 6.0Ω | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 5.4 | ns | VDS = 50V, ID = 1.0A, VGS = 10V, RG = 6.0Ω | 2 | ||
| Turn-Off Fall Time | tF | 1 | ns | VDS = 50V, ID = 1.0A, VGS = 10V, RG = 6.0Ω | 2 | ||
| Reverse Recovery Time | tRR | 22 | ns | VR = 100V, IF=1.8A, di/dt=100A/µs | 2 | ||
| Reverse Recovery Charge | QRR | 15 | nC | VR = 100V, IF=1.8A, di/dt=100A/µs | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 | 1 |
CAD (KiCad official)
- Symbol:
DMN10H700S-7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmn10h700s-7-etched.step/dmn10h700s-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn10h700s-7.step/dmn10h700s-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
7b63d16890eee87a, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMN10H700S-7
**Diodes Incorporated** · MOSFETs · SOT-23
DMN10H700S-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS(TH) 2.0 to 4.0 V (2.7 V typ) at ID = 250µA and an absolute maximum VGSS of ±20 V. |
| 2 | S | passive | Source; the body diode runs from source to drain, with maximum continuous body diode current IS of 0.6 A. |
| 3 | D | passive | Drain; VDSS is 100 V and continuous drain current is 0.70 A at TA = +25°C (VGS = 10 V). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 100 | V | TA = +25°C | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | TA = +25°C | 2 |
| Continuous Drain Current | ID | | | 0.7 | A | VGS = 10V, steady state, TA = +25°C (Note 6) | 2 |
| Continuous Drain Current | ID | | | 0.56 | A | VGS = 10V, steady state, TA = +70°C (Note 6) | 2 |
| Pulsed Drain Current | IDM | | | 2.5 | A | 10μs Pulse, Duty Cycle ≦1% | 2 |
| Maximum Body Diode Continuous Current | IS | | | 0.6 | A | Note 6 | 2 |
| Total Power Dissipation | PD | | | 0.4 | W | Note 5 | 2 |
| Total Power Dissipation | PD | | | 0.5 | W | Note 6 | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | 303 | | °C/W | Steady state (Note 5) | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | 239 | | °C/W | Note 6 | 2 |
| Thermal Resistance, Junction to Case | RθJC | | 88 | | °C/W | Note 6 | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 100V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | 2.7 | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 540 | 700 | mΩ | VGS = 10V, ID = 1.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 550 | 900 | mΩ | VGS = 6.0V, ID = 1.0A | 2 |
| Diode Forward Voltage | VSD | | 0.9 | 1.1 | V | VGS = 0V, IS = 1.5A | 2 |
| Input Capacitance | Ciss | | 235 | | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 7 | | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 5 | | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 |
| Gate Resistance | RG | | 1.9 | | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 2 |
| Total Gate Charge | Qg | | 4.6 | | nC | VDS = 50V, VGS = 10V, ID = 1.0A | 2 |
| Gate-Source Charge | Qgs | | 1.1 | | nC | VDS = 50V, VGS = 10V, ID = 1.0A | 2 |
| Gate-Drain Charge | Qgd | | 1.6 | | nC | VDS = 50V, VGS = 10V, ID = 1.0A | 2 |
| Turn-On Delay Time | tD(ON) | | 2.5 | | ns | VDS = 50V, ID = 1.0A, VGS = 10V, RG = 6.0Ω | 2 |
| Turn-On Rise Time | tR | | 1.1 | | ns | VDS = 50V, ID = 1.0A, VGS = 10V, RG = 6.0Ω | 2 |
| Turn-Off Delay Time | tD(OFF) | | 5.4 | | ns | VDS = 50V, ID = 1.0A, VGS = 10V, RG = 6.0Ω | 2 |
| Turn-Off Fall Time | tF | | 1 | | ns | VDS = 50V, ID = 1.0A, VGS = 10V, RG = 6.0Ω | 2 |
| Reverse Recovery Time | tRR | | 22 | | ns | VR = 100V, IF=1.8A, di/dt=100A/µs | 2 |
| Reverse Recovery Charge | QRR | | 15 | | nC | VR = 100V, IF=1.8A, di/dt=100A/µs | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 | 1 |
## CAD (KiCad official)
- Symbol: `DMN10H700S-7`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `dmn10h700s-7-etched.step` / `dmn10h700s-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn10h700s-7.step` / `dmn10h700s-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/DMN10H700S-7.pdf) (7 pp, sha256 `7b63d16890eee87a`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmn10h700s-7-datasheet.pdf)