component
DMN10H220LQ-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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DMN10H220LQ-7
Diodes Incorporated · MOSFETs · SOT-23
DMN10H220LQ-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±16 V with a threshold of 1 V to 2.5 V at ID = 250 µA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the body diode conducts up to 0.6 A continuous from source to drain. |
| 3 | D | passive | Drain terminal; drain-source voltage is rated 100 V and continuous drain current is 1.6 A at TA = +25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -16 | 16 | V | TA = +25°C | 2 | |
| Continuous Drain Current (Note 7) | ID | 1.6 | A | VGS = 10V, TA = +25C, Note 7 | 2 | ||
| Continuous Drain Current (Note 7) | ID | 1.3 | A | VGS = 10V, TA = +70C, Note 7 | 2 | ||
| Continuous Drain Current (Note 6) | ID | 1.4 | A | VGS = 10V, TA = +25C, Note 6 | 2 | ||
| Continuous Drain Current (Note 6) | ID | 1.1 | A | VGS = 10V, TA = +70C, Note 6 | 2 | ||
| Maximum Continuous Body Diode Forward Current | IS | 0.6 | A | Note 7 | 2 | ||
| Pulsed Drain Current | IDM | 8 | A | 10μs pulse, duty cycle = 1% | 2 | ||
| Total Power Dissipation | PD | 1.3 | W | TA = +25°C, Note 7 | 2 | ||
| Total Power Dissipation | PD | 0.8 | W | TA = +70°C, Note 7 | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 94 | °C/W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 7) | RθJA | 177 | °C/W | Note 7 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS = 0V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 100V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±16V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 2.5 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 220 | mΩ | VGS = 10V, ID = 1.6A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 250 | mΩ | VGS = 4.5V, ID = 1.3A | 2 | ||
| Diode Forward Voltage | VSD | 0.7 | 1.2 | V | VGS = 0V, IS = 1.1A | 2 | |
| Input Capacitance | Ciss | 401 | pF | VDS = 25V, VGS = 0V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 22 | pF | VDS = 25V, VGS = 0V, f = 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 17 | pF | VDS = 25V, VGS = 0V, f = 1MHz | 2 | ||
| Gate Resistance | Rg | 2.1 | Ω | VDS = 0V, VGS = 0V, f = 1MHz | 2 | ||
| Total Gate Charge (VGS = 4.5V) | Qg | 4.1 | nC | VDS = 50V, ID = 1.6A | 2 | ||
| Total Gate Charge (VGS = 10V) | Qg | 8.3 | nC | VDS = 50V, ID = 1.6A | 2 | ||
| Gate-Source Charge | Qgs | 1.5 | nC | VDS = 50V, ID = 1.6A | 2 | ||
| Gate-Drain Charge | Qgd | 2 | nC | VDS = 50V, ID = 1.6A | 2 | ||
| Turn-On Delay Time | tD(ON) | 6.8 | ns | VDS = 50V, VGS = 4.5V, RG = 6.8Ω, ID = 1A | 2 | ||
| Turn-On Rise Time | tR | 8.2 | ns | VDS = 50V, VGS = 4.5V, RG = 6.8Ω, ID = 1A | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 7.9 | ns | VDS = 50V, VGS = 4.5V, RG = 6.8Ω, ID = 1A | 2 | ||
| Turn-Off Fall Time | tF | 3.6 | ns | VDS = 50V, VGS = 4.5V, RG = 6.8Ω, ID = 1A | 2 | ||
| Reverse Recovery Time | tRR | 17 | ns | IF = 1.1A, di/dt =100A/μs | 2 | ||
| Reverse Recovery Charge | QRR | 9.8 | nC | IF = 1.1A, di/dt =100A/μs | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections: See Diagram Terminals: Finish, Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMN10H220LQ-7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmn10h220lq-7-etched.step/dmn10h220lq-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn10h220lq-7.step/dmn10h220lq-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
6daed253938f42b4, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).