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DMN10H220LE-13-ES

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ElecSuper MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN10H220LE-13-ES

ElecSuper · MOSFETs · SOT-223

DMN10H220LE-13-ES from ElecSuper, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with gate-source voltage VGS rated at ±20 V in the absolute maximum ratings.
2 Drain passive Drain terminal of the N-channel MOSFET, with drain-source voltage BVDSS rated at 100 V and continuous drain current ID rated at 4 A at TA=25°C.
3 Source passive Source terminal of the N-channel MOSFET, serving as the reference for gate-source voltage and the body diode, with forward voltage VSD specified at 1.5 V for IS=4 A.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS 100 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 4 A TA=25°C 2
Continuous Drain Current ID 2.3 A TA=100°C 2
Maximum Power Dissipation PD 3.1 W 2
Pulsed Drain Current IDM 16 A 2
Avalanche Current, Single Pulsed IAS 9 A Note a: Tj=25℃,VDD=100V,VG=10V,L=0.3mH,Rg=25Ω 2
Avalanche Energy, Single Pulsed EAS 12 mJ Note a: Tj=25℃,VDD=100V,VG=10V,L=0.3mH,Rg=25Ω 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Ambient Thermal Resistance RθJA 40 °C/W Single Operation 2
Drain-to-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=100V, VGS=0V 3
Gate-to-source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(TH) 1 1.7 2.5 V VGS=VDS, ID=250uA 3
Drain-to-source On-resistance RDS(on) 120 150 mΩ VGS=10V, ID=4A 3
Drain-to-source On-resistance RDS(on) 130 180 mΩ VGS=4.5V, ID=3A 3
Input Capacitance CISS 650 pF VGS=0V, f=1MHz, VDS=25V 3
Output Capacitance COSS 30 pF 3
Reverse Transfer Capacitance CRSS 25 pF 3
Forward Voltage VSD 1.5 V VGS=0V, IS=4A 3

CAD (KiCad official)

  • Symbol: DMN10H220LE-13-ES
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: dmn10h220le-13-es-etched.step / dmn10h220le-13-es-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn10h220le-13-es.step / dmn10h220le-13-es.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (8 pp, sha256 90324720cf1031ff, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF