component
DMN10H170SVTQ-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMN10H170SVTQ-7
Diodes Incorporated · MOSFETs · TSOT-26
DMN10H170SVTQ-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the 100V N-channel MOSFET, rated for a continuous drain current of 2.6A at TA = +25°C per the maximum ratings. |
| 2 | D | passive | Drain terminal of the 100V N-channel MOSFET, rated for a drain-source voltage of 100V per the maximum ratings. |
| 3 | G | input | Gate terminal, rated for a gate-source voltage of ±20V per the maximum ratings. |
| 4 | S | passive | Source terminal of the MOSFET, which carries the maximum body diode continuous current of 2.0A per the maximum ratings. |
| 5 | D | passive | Drain terminal of the 100V N-channel MOSFET, rated for a drain-source voltage of 100V per the maximum ratings. |
| 6 | D | passive | Drain terminal of the 100V N-channel MOSFET, rated for a drain-source voltage of 100V per the maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-26 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS = 0V, ID = 250µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100V, VGS = 0V | 3 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 2 | 3 | V | VDS = VGS, ID = 250µA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | 115 | 160 | mΩ | VGS = 10V, ID = 5.0A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 124 | 200 | mΩ | VGS = 4.5V, ID = 5.0A | 3 | |
| Diode Forward Voltage | VSD | 0.9 | 1 | V | VGS = 0V, IS = 10A | 3 | |
| Drain-Source Voltage | VDSS | 100 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA = +25°C | 2 | |
| Continuous Drain Current | ID | 2.6 | A | VGS = 10V, steady state, TA = +25°C (Note 7) | 2 | ||
| Continuous Drain Current | ID | 2.1 | A | VGS = 10V, steady state, TA = +70°C (Note 7) | 2 | ||
| Pulsed Drain Current | IDM | 11.2 | A | 10μs Pulse, Duty Cycle ≦1% | 2 | ||
| Maximum Body Diode Continuous Current | IS | 2 | A | Note 7 | 2 | ||
| Total Power Dissipation | PD | 1.2 | W | Note 6 | 2 | ||
| Total Power Dissipation | PD | 1.7 | W | Note 7 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 101 | °C/W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 73 | °C/W | Note 7 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 15 | °C/W | Note 7 | 2 | ||
| Input Capacitance | Ciss | 1167 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | ||
| Output Capacitance | Coss | 36 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 25 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | ||
| Gate Resistance | Rg | 1.3 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 3 | ||
| Total Gate Charge (VGS = 4.5V) | Qg | 4.9 | nC | VDS = 80V, ID = 12.8A | 3 | ||
| Total Gate Charge (VGS = 10V) | Qg | 9.7 | nC | VDS = 80V, ID = 12.8A | 3 | ||
| Gate-Source Charge | Qgs | 2 | nC | VDS = 80V, ID = 12.8A | 3 | ||
| Gate-Drain Charge | Qgd | 2 | nC | VDS = 80V, ID = 12.8A | 3 | ||
| Turn-On Delay Time | tD(ON) | 10 | ns | VDD = 50V, VGS = 10V, Rg = 25Ω, ID = 12.8A | 3 | ||
| Turn-On Rise Time | tR | 11 | ns | VDD = 50V, VGS = 10V, Rg = 25Ω, ID = 12.8A | 3 | ||
| Turn-Off Delay Time | tD(OFF) | 42 | ns | VDD = 50V, VGS = 10V, Rg = 25Ω, ID = 12.8A | 3 | ||
| Turn-Off Fall Time | tF | 12 | ns | VDD = 50V, VGS = 10V, Rg = 25Ω, ID = 12.8A | 3 | ||
| Reverse Recovery Time | tRR | 30 | ns | VGS = 0V, IS=12.8A, di/dt=100A/µs | 3 | ||
| Reverse Recovery Charge | QRR | 35 | nC | VGS = 0V, IS=12.8A, di/dt=100A/µs | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMN10H170SVTQ-7 - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-26 (KiCad packages3D, STEP)
- 3D model files:
dmn10h170svtq-7-etched.step/dmn10h170svtq-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn10h170svtq-7.step/dmn10h170svtq-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
5d2dcb2ba4463e39, retrieved 2026-11-02, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).