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DMN10H170SVT-7

Public Made by Adom

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Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN10H170SVT-7

Diodes Incorporated · MOSFETs · TSOT-26

DMN10H170SVT-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal of the N-channel MOSFET; the device is rated for VDSS 100 V and continuous ID 2.6 A at TA = +25°C.
2 D passive Drain terminal of the N-channel MOSFET; the device is rated for VDSS 100 V and continuous ID 2.6 A at TA = +25°C.
3 G input Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V (VGSS).
4 S passive Source terminal of the N-channel MOSFET; maximum body diode continuous current IS is 2.0 A.
5 D passive Drain terminal of the N-channel MOSFET; the device is rated for VDSS 100 V and continuous ID 2.6 A at TA = +25°C.
6 D passive Drain terminal of the N-channel MOSFET; the device is rated for VDSS 100 V and continuous ID 2.6 A at TA = +25°C.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TSOT-26
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current (TA = +25°C) ID 2.6 A VGS = 10V, steady state, TA = +25°C 2
Continuous Drain Current (TA = +70°C) ID 2.1 A VGS = 10V, steady state, TA = +70°C 2
Pulsed Drain Current IDM 11.2 A 10µs pulse, duty cycle ≦1% 2
Maximum Body Diode Continuous Current IS 2 A Note 6 2
Total Power Dissipation PD 1.2 W Note 5 (FR-4, minimum recommended pad layout) 2
Total Power Dissipation PD 1.7 W Note 6 (FR-4, 1 inch square copper plate) 2
Thermal Resistance, Junction to Ambient RJA 101 °C/W Note 5 (FR-4, minimum recommended pad layout) 2
Thermal Resistance, Junction to Ambient RJA 73 °C/W Note 6 (FR-4, 1 inch square copper plate) 2
Thermal Resistance, Junction to Case RJC 15 °C/W Note 6 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100V, VGS = 0V 2
Gate-Body Leakage IGSS -100 100 nA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 1 2 3 V VDS = VGS, ID = 250µA 2
Static Drain-Source On-Resistance RDS(ON) 115 160 mΩ VGS = 10V, ID = 5.0A 2
Static Drain-Source On-Resistance RDS(ON) 124 200 mΩ VGS = 4.5V, ID = 5.0A 2
Diode Forward Voltage VSD 0.9 1 V VGS = 0V, IS = 10A 2
Input Capacitance Ciss 1167 pF VDS = 25V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 36 pF VDS = 25V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz 2
Gate Resistance Rg 1.3 Ω VDS = 0V, VGS = 0V, f = 1.0MHz 2
Total Gate Charge (VGS = 4.5V) Qg 4.9 nC VDS = 80V, ID = 12.8A 2
Total Gate Charge (VGS = 10V) Qg 9.7 nC VDS = 80V, ID = 12.8A 2
Gate-Source Charge Qgs 2 nC 2
Gate-Drain Charge Qgd 2 nC 2
Turn-On Delay Time tD(on) 10 nS VDD = 50V, VGS = 10V, RG = 25Ω, ID = 12.8A 2
Turn-On Rise Time tr 11 nS VDD = 50V, VGS = 10V, RG = 25Ω, ID = 12.8A 2
Turn-Off Delay Time tD(off) 42 nS VDD = 50V, VGS = 10V, RG = 25Ω, ID = 12.8A 2
Turn-Off Fall Time tf 12 nS VDD = 50V, VGS = 10V, RG = 25Ω, ID = 12.8A 2
Reverse Recovery Time trr 30 nS VGS = 0V, IS = 12.8A, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 35 nC 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. 1

CAD (KiCad official)

  • Symbol: DMN10H170SVT-7
  • Footprint: Package_TO_SOT_SMD:TSOT-23-6
  • 3D model: TSOT-26 (KiCad packages3D, STEP)
  • 3D model files: dmn10h170svt-7-etched.step / dmn10h170svt-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn10h170svt-7.step / dmn10h170svt-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 906fceff4e997268, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF