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Contents

README

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DMN10H170SK3Q-13

Diodes Incorporated · MOSFETs · TO-252

DMN10H170SK3Q-13 from Diodes Incorporated, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the top-view diagram shows it as the left lead, with VGSS limited to ±20V and VGS(th) of 1.0V to 3.0V at ID = 250µA.
2 D passive Drain; the center lead, which is also the exposed drain tab at top, with VDSS of 100V and continuous ID of 12A at TC = +25°C.
3 S passive Source; the right lead in the top-view diagram, with maximum body diode forward current IS of 4A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 12 A VGS = 10V, steady state, TC = +25°C 2
Continuous Drain Current ID 7.5 A VGS = 10V, steady state, TC = +100°C 2
Maximum Body Diode Forward Current IS 4 A Note 6 2
Pulsed Drain Current IDM 16 A 10s pulse, duty cycle = 1% 2
Avalanche Current IAR 5.3 A Note 7: UIS, L = 1.43mH, TJ = +25°C 2
Avalanche Energy EAR 20 mJ Note 7: UIS, L = 1.43mH, TJ = +25°C 2
Total Power Dissipation PD 42 W Note 6, TC = +25°C 2
Total Power Dissipation PD 17 W Note 6, TC = +100°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Thermal Resistance, Junction to Ambient RθJA 44 °C/W Note 6: device mounted on FR-4 PCB, 2oz copper, 1 inch square pad 2
Thermal Resistance, Junction to Case RθJC 3 °C/W Note 6: device mounted on FR-4 PCB, 2oz copper, 1 inch square pad 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100V, VGS = 0V 2
Gate-Source Leakage IGSS 100 nA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250µA 2
Static Drain-Source On-Resistance RDS(ON) 99 140 mΩ VGS = 10V, ID = 5A 2
Static Drain-Source On-Resistance RDS(ON) 104 160 mΩ VGS = 4.5V, ID = 5A 2
Diode Forward Voltage VSD 0.7 1 V VGS = 0V, IS = 10A 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Body Diode Reverse Recovery Charge Qrr  35.2  nC VGS = 0V, IS = 12.8A, dI/dt = 100A/μs Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 2
contacts Copper tin  Terminal Connections: See Diagram  Terminals: Finish, Matte Tin annealed over Copper leadframe. 1

CAD (KiCad official)

  • Symbol: DMN10H170SK3Q-13
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: dmn10h170sk3q-13-etched.step / dmn10h170sk3q-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn10h170sk3q-13.step / dmn10h170sk3q-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 d39e3124ee068471, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF