# DMN100-7-F-VB

**VBsemi Elec** · MOSFETs · SOT-23(TO-236)

DMN100-7-F-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet limits the gate-source voltage to ±20 V. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous source-drain diode current is rated at 1.4 A at TC = 25 °C. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated at 30 V, with continuous drain current ratings of 6.5 A (TC = 25 °C) and 5.3 A (TA = 25 °C). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V | TA = 25 °C (table header) | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA = 25 °C (table header) | 1 |
| Continuous Drain Current | ID |  |  | 6.5 | A | TJ = 150 °C, TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 6 | A | TJ = 150 °C, TC = 70 °C | 1 |
| Continuous Drain Current | ID |  |  | 5.3 | A | TJ = 150 °C, TA = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 5 | A | TJ = 150 °C, TA = 70 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 25 | A |  | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 1.4 | A | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.7 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.1 | W | TC = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering Recommendations (Peak Temperature) |  |  |  | 260 |  | Notes d, e | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 90 | 115 | °C/W | t ≤ 5 s | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF |  | 60 | 75 | °C/W | Steady State | 1 |
| Maximum Junction-to-Ambient (steady state) | RthJA |  |  | 130 | °C/W | Steady state conditions (note d) | 1 |
| Drain-Source Breakdown Voltage | VDS | 30 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 0.7 |  | 2 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 10 |  |  | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.03 | Ω | VGS = 10 V, ID = 3.2 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.033 | Ω | VGS = 4.5 V, ID = 2.8 A | 2 |
| Gate Resistance | Rg | 0.8 | 4.4 | 8.8 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg |  | 4.5 | 6.7 | nC | VDS = 15 V, VGS = 10 V, ID = 3.4 A | 2 |
| Total Gate Charge | Qg |  | 2.1 | 3.2 | nC | VDS = 15 V, VGS = 4.5 V, ID = 3.4 A | 2 |
| Turn-On Delay Time | td(on) |  | 12 | 20 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 50 | 75 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 12 | 20 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 22 | 35 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) |  | 5 | 10 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 12 | 20 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 10 | 15 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 5 | 10 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Body Diode Voltage | VSD |  | 0.8 | 1.2 | V | IS = 2.7 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 10 | 20 | ns | IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 5 | 10 | nC | IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |

## CAD (land: KiCad; 3D: generated from the datasheet)

- Symbol: `DMN100-7-F-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files: `dmn100-7-f-vb-etched.step` / `dmn100-7-f-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn100-7-f-vb.step` / `dmn100-7-f-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/dmn100-7-f-vb-datasheet.pdf) (9 pp, sha256 `f245239d6d2d4978`, retrieved 2026-11-13, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

[Datasheet PDF](docs/dmn100-7-f-vb-datasheet.pdf)