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DMMT3906W-7-F

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Diodes Incorporated Bipolar Transistors - BJT, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMMT3906W-7-F

Diodes Incorporated · Bipolar Transistors - BJT · SOT-363

DMMT3906W-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B2 passive Base of PNP transistor 2, matched to transistor 1 (VBE matching 2mV max, hFE matching 2% max), with VEBO rated -5.0V.
2 B1 passive Base of PNP transistor 1, matched to transistor 2 (VBE matching 2mV max, hFE matching 2% max), with VEBO rated -5.0V.
3 C1 passive Collector of PNP transistor 1, rated IC -200mA, VCEO -40V and VCBO -40V.
4 E1 passive Emitter of PNP transistor 1, with emitter-base voltage limit VEBO of -5.0V.
5 E2 passive Emitter of PNP transistor 2, with emitter-base voltage limit VEBO of -5.0V.
6 C2 passive Collector of PNP transistor 2, rated IC -200mA, VCEO -40V and VCBO -40V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-363
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -40 V TA = +25°C 2
Collector-Emitter Voltage VCEO -40 V TA = +25°C 2
Emitter-Base Voltage VEBO -5 V TA = +25°C 2
Collector Current IC -200 mA TA = +25°C 2
Power Dissipation, Total Device PD 200 mW Note 7, TA = +25°C 2
Operating and Storage Temperature Range TJ, TSTG -65 150 °C 2
ESD Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
ESD Machine Model ESD MM 400 V JEDEC Class C 2
Thermal Resistance, Junction to Ambient RθJA 625 °C/W Note 7 2
Collector-Base Breakdown Voltage BVCBO -40 V IC = -100µA, IE = 0 3
Collector-Emitter Breakdown Voltage BVCEO -40 V IC = -1.0mA, IB = 0 3
Emitter-Base Breakdown Voltage BVEBO -5 V IE = -100µA, IC = 0 3
Collector Cutoff Current ICEX -50 nA VCE = -30V, VEB(OFF) = 3.0V 3
Base Cutoff Current IBL -50 nA VCE = -30V, VEB(OFF) = 3.0V 3
DC Current Gain hFE 60 IC = -100µA, VCE = -1.0V 3
DC Current Gain hFE 80 IC = -1.0mA, VCE = -1.0V 3
DC Current Gain hFE 100 300 IC = -10mA, VCE = -1.0V 3
DC Current Gain hFE 30 IC = -100mA, VCE = -1.0V 3
Collector-Emitter Saturation Voltage VCE(SAT) -250 mV IC = -10mA, IB = -1.0mA 3
Collector-Emitter Saturation Voltage VCE(SAT) -400 mV IC = -50mA, IB = -5.0mA 3
Base-Emitter Saturation Voltage VBE(SAT) 0.65 -850 mV IC = -10mA, IB = -1.0mA 3
Base-Emitter Saturation Voltage VBE(SAT) -950 mV IC = -50mA, IB = -5.0mA 3
DC Current Gain Matching hFE1 / hFE2 1 2 % IC = -2mA, VCE = -5V 3
Base-Emitter Voltage Matching VBE1 - VBE2 1 2 mV IC = -2mA, VCE = -5V 3
Collector-Emitter Saturation Voltage Matching VCE(SAT)1 / VCE(SAT)2 1 2 % IC = -10mA, IB = -1.0mA 3
Base-Emitter Saturation Voltage Matching VBE(SAT)1 / VBE(SAT)2 1 2 % IC = -10mA, IB = -1.0mA 3
Output Capacitance COBO 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 3
Input Capacitance CIBO 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 3
Input Impedance hIE 2 12 kΩ VCE = 10V, IC = 1.0mA, f = 1.0kHz 3
Voltage Feedback Ratio hRE 0.1 10 x 10-4 VCE = 10V, IC = 1.0mA, f = 1.0kHz 3
Small Signal Current Gain hFE 100 400 VCE = 10V, IC = 1.0mA, f = 1.0kHz 3
Output Admittance hOE 3 60 µS VCE = 10V, IC = 1.0mA, f = 1.0kHz 3
Current Gain-Bandwidth Product fT 250 MHz VCE = -20V, IC = -10mA, f = 100MHz 3
Noise Figure NF 4 dB VCE = -5.0V, IC = -100µA, RS = 1.0kΩ f = 1.0kHz 3
Delay Time tD 35 ns VCC = -3.0V, IC = -10mA, VBE(OFF) = 0.5V, IB1 = -1.0mA 3
Rise Time tR 35 ns VCC = -3.0V, IC = -10mA, VBE(OFF) = 0.5V, IB1 = -1.0mA 3
Storage Time tS 225 ns VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA 3
Fall Time tF 75 ns VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish  Matte Tin Finish. Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: DMMT3906W-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: dmmt3906w-7-f-etched.step / dmmt3906w-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmmt3906w-7-f.step / dmmt3906w-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 4dca1ff88bae71df, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF