# DMMT3904WQ-7-F

**Diodes Incorporated** · Bipolar (BJT) · SOT-363

DMMT3904WQ-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B2 | input | Base of transistor 2 (NPN), part of the intrinsically matched pair with 2% hFE and 2mV VBE matching. |
| 2 | B1 | input | Base of transistor 1 (NPN), part of the intrinsically matched pair with 2% hFE and 2mV VBE matching. |
| 3 | C1 | passive | Collector of transistor 1 (NPN); VCEO 40V, VCBO 60V, IC up to 200mA. |
| 4 | E1 | passive | Emitter of transistor 1 (NPN); VEBO rating is 6.0V. |
| 5 | E2 | passive | Emitter of transistor 2 (NPN); VEBO rating is 6.0V. |
| 6 | C2 | passive | Collector of transistor 2 (NPN); VCEO 40V, VCBO 60V, IC up to 200mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO |  |  | 60 | V |  | 2 |
| Collector-Emitter Voltage | VCEO |  |  | 40 | V |  | 2 |
| Emitter-Base Voltage | VEBO |  |  | 6 | V |  | 2 |
| Collector Current | IC |  |  | 200 | mA |  | 2 |
| Electrostatic Discharge - Human Body Model | ESD HBM |  |  | 4000 | V | JEDEC Class 3A | 2 |
| Electrostatic Discharge - Machine Model | ESD MM |  |  | 400 | V | JEDEC Class C | 2 |
| Power Dissipation, Total Device | PD |  |  | 200 | mW | Total device; note 7 minimum recommended pad layout, still air | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 625 | °C/W | Junction to ambient; note 7 | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -65 |  | 150 | °C |  | 2 |
| Collector-Base Breakdown Voltage | BVCBO | 60 |  |  | V | IC = 100µA, IE = 0 | 3 |
| Collector-Emitter Breakdown Voltage | BVCEO | 40 |  |  | V | IC = 1.0mA, IB = 0 | 3 |
| Emitter-Base Breakdown Voltage | BVEBO | 6 |  |  | V | IE = 100µA, IC = 0 | 3 |
| Collector Cutoff Current | ICEX |  |  | 50 | nA | VCE = 30V, VEB(OFF) = 3.0V | 3 |
| Base Cutoff Current | IBL |  |  | 50 | nA | VCE = 30V, VEB(OFF) = 3.0V | 3 |
| DC Current Gain | hFE | 40 |  |  |  | IC = 100µA, VCE = 1.0V | 3 |
| DC Current Gain | hFE | 70 |  |  |  | IC = 1.0mA, VCE = 1.0V | 3 |
| DC Current Gain | hFE | 100 |  |  |  | IC = 10mA, VCE = 1.0V | 3 |
| DC Current Gain | hFE | 60 |  |  |  | IC = 50mA, VCE = 1.0V | 3 |
| DC Current Gain | hFE | 30 |  |  |  | IC = 100mA, VCE = 1.0V | 3 |
| DC Current Gain (upper limit) | hFE |  |  | 300 |  |  | 3 |
| Collector-Emitter Saturation Voltage | VCE(SAT) |  |  | 200 | mV | IC = 10mA, IB = 1.0mA | 3 |
| Collector-Emitter Saturation Voltage | VCE(SAT) |  |  | 300 | mV | IC = 50mA, IB = 5.0mA | 3 |
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.65 |  |  | mV |  | 3 |
| Base-Emitter Saturation Voltage | VBE(SAT) |  |  | 850 | mV | IC = 10mA, IB = 1.0mA | 3 |
| Base-Emitter Saturation Voltage | VBE(SAT) |  |  | 950 | mV | IC = 50mA, IB = 5.0mA | 3 |
| DC Current Gain Matching | hFE1 / hFE2 |  | 1 | 2 | % | IC = 2mA, VCE = 5V | 3 |
| Base-Emitter Voltage Matching | VBE1 - VBE2 |  | 1 | 2 | mV | IC = 2mA, VCE = 5V | 3 |
| Collector-Emitter Saturation Voltage Matching | VCE(SAT)1 / VCE(SAT)2 |  | 1 | 2 | % | IC = 10mA, IB = 1.0mA | 3 |
| Base-Emitter Saturation Voltage Matching | VBE(SAT)1 / VBE(SAT)2 |  | 1 | 2 | % | IC = 10mA, IB = 1.0mA | 3 |
| Output Capacitance | COBO |  |  | 4 | pF | VCB = 5.0V, f = 1.0MHz, IE = 0 | 3 |
| Input Capacitance | CIBO |  |  | 8 | pF | VEB = 0.5V, f = 1.0MHz, IC = 0 | 3 |
| Input Impedance | hIE | 1 |  | 10 | kΩ | VCE = 10V, IC = 1.0mA, f = 1.0kHz | 3 |
| Voltage Feedback Ratio | hRE | 0.5 |  | 8 | x 10-4 |  | 3 |
| Small Signal Current Gain | hFE | 100 |  | 400 |  |  | 3 |
| Output Admittance | hOE | 1 |  | 40 | µS |  | 3 |
| Current Gain-Bandwidth Product | fT | 300 |  |  | MHz | VCE = 20V, IC = 10mA, f = 100MHz | 3 |
| Noise Figure | NF |  |  | 5 | dB | VCE = 5.0V, IC = 100µA, RS = 1.0kΩ f = 1.0kHz | 3 |
| Delay Time | tD |  |  | 35 | ns | VCC = 3.0V, IC = 10mA, VBE(OFF) = -0.5V, IB1 = 1.0mA | 3 |
| Rise Time | tR |  |  | 35 | ns | VCC = 3.0V, IC = 10mA, VBE(OFF) = -0.5V, IB1 = 1.0mA | 3 |
| Storage Time | tS |  |  | 200 | ns | VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA | 3 |
| Fall Time | tF |  |  | 50 | ns | VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA | 3 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts |  | tin |  Terminals: Finish  Matte Tin Finish. Solderable per MIL-STD-202, Method 208 | 1 |

## CAD (KiCad official)

- Symbol: `DMMT3904WQ-7-F`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `dmmt3904wq-7-f-etched.step` / `dmmt3904wq-7-f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmmt3904wq-7-f.step` / `dmmt3904wq-7-f.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912342755659776) (6 pp, sha256 `92582383a094125e`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmmt3904wq-7-f-datasheet.pdf)