component
DMHC4035LSD-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMHC4035LSD-13
Diodes Incorporated · MOSFETs · SO-8
DMHC4035LSD-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | N1G | input | Gate of N-channel MOSFET N1 (VGSS ±20V max, VGS(th) 1 to 3V). |
| 2 | N1D/P1D | passive | Common drain of N-channel N1 and P-channel P1 (left half-bridge output, 40V VDSS). |
| 3 | N1S/N2S | passive | Common source of both N-channel MOSFETs N1 and N2 (low-side return of the H-bridge). |
| 4 | N2G | input | Gate of N-channel MOSFET N2 (VGSS ±20V max, VGS(th) 1 to 3V). |
| 5 | P2G | input | Gate of P-channel MOSFET P2 (VGSS ±20V max, VGS(th) -1 to -3V). |
| 6 | N2D/P2D | passive | Common drain of N-channel N2 and P-channel P2 (right half-bridge output, 40V VDSS). |
| 7 | P1S/P2S | passive | Common source of both P-channel MOSFETs P1 and P2 (high-side supply side of the H-bridge, -40V VDSS). |
| 8 | P1G | input | Gate of P-channel MOSFET P1 (VGSS ±20V max, VGS(th) -1 to -3V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Ch Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS = 0V, ID = 250μA | 3 | ||
| N-Ch Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 40V, VGS = 0V | 3 | ||
| N-Ch Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 3 | |
| N-Ch Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250μA | 3 | |
| N-Ch Static On-Resistance at VGS=10V | RDS(ON) | 26 | 45 | mΩ | VGS = 10V, ID = 3.9A | 3 | |
| N-Ch Static On-Resistance at VGS=4.5V | RDS(ON) | 35 | 58 | mΩ | VGS = 4.5V, ID = 3.5A | 3 | |
| N-Ch Diode Forward Voltage | VSD | 0.7 | 1 | V | VGS = 0V, IS = 1.25A | 3 | |
| P-Ch Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS = 0V, ID = -250μA | 3 | ||
| P-Ch Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -40V, VGS = 0V | 3 | ||
| P-Ch Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 3 | |
| P-Ch Gate Threshold Voltage | VGS(th) | -3 | -1 | V | VDS = VGS, ID = -250μA | 3 | |
| P-Ch Static On-Resistance at VGS=-10V | RDS(ON) | 49 | 65 | mΩ | VGS = -10V, ID = -4.2A | 3 | |
| P-Ch Static On-Resistance at VGS=-4.5V | RDS(ON) | 73 | 100 | mΩ | VGS = -4.5V, ID = -3.3A | 3 | |
| P-Ch Diode Forward Voltage | VSD | -1.2 | -0.7 | V | VGS = 0V, IS = -1A | 3 | |
| N-Ch Drain-Source Voltage | VDSS | 40 | V | TA = +25°C | 2 | ||
| N-Ch Gate-Source Voltage | VGSS | -20 | 20 | V | TA = +25°C | 2 | |
| N-Ch Continuous Drain Current VGS=10V steady state | ID | 4.5 | A | TA = +25°C, steady state | 2 | ||
| N-Ch Continuous Drain Current VGS=10V steady state 70C | ID | 3.5 | A | TA = +70°C, steady state | 2 | ||
| N-Ch Continuous Drain Current VGS=10V t<10s | ID | 5.8 | A | TA = +25°C, t<10s | 2 | ||
| N-Ch Continuous Drain Current VGS=4.5V steady state | ID | 4 | A | TA = +25°C, steady state | 2 | ||
| N-Ch Body Diode Forward Current | IS | 1.5 | A | TA = +25°C | 2 | ||
| N-Ch Pulsed Drain Current | IDM | 25 | A | 10µs pulse, duty cycle = 1% | 2 | ||
| P-Ch Drain-Source Voltage | VDSS | -40 | V | TA = +25°C | 2 | ||
| P-Ch Gate-Source Voltage | VGSS | -20 | 20 | V | TA = +25°C | 2 | |
| P-Ch Continuous Drain Current VGS=-10V steady state | ID | -3.7 | A | TA = +25°C, steady state | 2 | ||
| P-Ch Continuous Drain Current VGS=-10V t<10s | ID | -4.8 | A | TA = +25°C, t<10s | 2 | ||
| P-Ch Continuous Drain Current VGS=-4.5V steady state | ID | -2.9 | A | TA = +25°C, steady state | 2 | ||
| P-Ch Body Diode Forward Current | IS | -1.5 | A | TA = +25°C | 2 | ||
| P-Ch Pulsed Drain Current | IDM | -15 | A | 10µs pulse, duty cycle = 1% | 2 | ||
| Total Power Dissipation | PD | 1.5 | W | TA = +25°C, Note 5 | 2 | ||
| Thermal Resistance Junction to Ambient, steady state | RθJA | 85 | °C/W | Steady state, Note 5 | 2 | ||
| Thermal Resistance Junction to Ambient, t<10s | RθJA | 53 | °C/W | t<10s, Note 5 | 2 | ||
| Thermal Resistance Junction to Case | RθJC | 15 | °C/W | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| N-Ch Input Capacitance | Ciss | 574 | pF | VDS = 20V, VGS = 0V, f = 1MHz | 3 | ||
| N-Ch Output Capacitance | Coss | 87.8 | pF | VDS = 20V, VGS = 0V, f = 1MHz | 3 | ||
| N-Ch Reverse Transfer Capacitance | Crss | 38.7 | pF | VDS = 20V, VGS = 0V, f = 1MHz | 3 | ||
| N-Ch Gate Resistance | Rg | 1.6 | Ω | VDS = 0V, VGS = 0V, f = 1MHz | 3 | ||
| P-Ch Input Capacitance | Ciss | 587 | pF | VDS = -20V, VGS = 0V, f = 1MHz | 3 | ||
| P-Ch Output Capacitance | Coss | 88.1 | pF | VDS = -20V, VGS = 0V, f = 1MHz | 3 | ||
| P-Ch Reverse Transfer Capacitance | Crss | 40.2 | pF | VDS = -20V, VGS = 0V, f = 1MHz | 3 | ||
| P-Ch Gate Resistance | Rg | 12.3 | Ω | VDS = 0V, VGS = 0V, f = 1MHz | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminal Connections Indicator: See diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMHC4035LSD-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
dmhc4035lsd-13-etched.step/dmhc4035lsd-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmhc4035lsd-13.step/dmhc4035lsd-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (9 pp, sha256
a234809bfe7c1a8c, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).