# DMGD7N45SSD-13

**Diodes Incorporated** · MOSFETs · SO-8

DMGD7N45SSD-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; body diode maximum forward current is 1.7 A (IS) and drain-source voltage is rated 450 V (VDSS). |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage is limited to ±30 V (VGSS) with gate threshold 3.5 V to 4.5 V at VDS = 10 V, ID = 1 mA. |
| 3 | S2 | passive | Source of MOSFET 2; body diode maximum forward current is 1.7 A (IS) and drain-source voltage is rated 450 V (VDSS). |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage is limited to ±30 V (VGSS) with gate threshold 3.5 V to 4.5 V at VDS = 10 V, ID = 1 mA. |
| 5 | D2 | passive | Drain of MOSFET 2; drain-source voltage is rated 450 V (VDSS) and continuous drain current is 0.5 A steady state at VGS = 10 V. |
| 6 | D2 | passive | Drain of MOSFET 2 (second drain pin, internally tied to pin 5); drain-source voltage is rated 450 V (VDSS) and continuous drain current is 0.5 A steady state at VGS = 10 V. |
| 7 | D1 | passive | Drain of MOSFET 1; drain-source voltage is rated 450 V (VDSS) and continuous drain current is 0.5 A steady state at VGS = 10 V. |
| 8 | D1 | passive | Drain of MOSFET 1 (second drain pin, internally tied to pin 7); drain-source voltage is rated 450 V (VDSS) and continuous drain current is 0.5 A steady state at VGS = 10 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 450 | V |  | 2 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 2 |
| Continuous Drain Current (steady state) | ID |  |  | 0.5 | A | VGS = 10V, steady state | 2 |
| Continuous Drain Current (t < 10s) | ID |  |  | 0.62 | A | VGS = 10V, t < 10s | 2 |
| Continuous Drain Current (t < 1s) | ID |  |  | 0.85 | A | VGS = 10V, t < 1s | 2 |
| Pulsed Drain Current | IDM |  |  | 2.2 | A | 10µs pulse, duty cycle = 1% | 2 |
| Maximum Body Diode Forward Current | IS |  |  | 1.7 | A | Note 5 | 2 |
| Avalanche Current | IAS |  |  | 1.4 | A | L = 60mH | 2 |
| Avalanche Current | IAS |  |  | 2.2 | A | L = 10mH (Note 8) | 2 |
| Avalanche Energy | EAS |  |  | 56 | mJ | L = 60mH | 2 |
| Avalanche Energy | EAS |  |  | 25 | mJ | L = 10mH (Note 8) | 2 |
| Total Power Dissipation | PD |  |  | 1.64 | W | Note 5 | 2 |
| Thermal Resistance, Junction to Ambient (steady state) | RΘJA |  |  | 78 | °C/W | Steady state | 2 |
| Thermal Resistance, Junction to Ambient (t < 10s) | RΘJA |  |  | 20.2 | °C/W | t < 10s | 2 |
| Thermal Resistance, Junction to Case | RΘJC |  |  | 13.3 | °C/W |  | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 450 |  |  | V | VGS = 0V, ID = 10mA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 450V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ±30V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(th) | 3.5 |  | 4.5 | V | VDS = 10V, ID = 1mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 3 | 4 | Ω | VGS = 10V, ID = 0.4A | 2 |
| Forward Transfer Admittance | /Yfs/ | 0.55 | 1.1 |  | S | VDS = 10V, ID = 0.4A | 2 |
| Diode Forward Voltage | VSD |  | 0.7 | 1.2 | V | VGS = 0V, IS = 0.7A | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC |  | IF = 1A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr ⎯ 314 ⎯ nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. | 2 |
| contacts | Copper | tin | • Terminals Connections: See diagram below • Terminals: Finish - Matte Tin annealed over Copper lead frame. | 1 |

## CAD (KiCad official)

- Symbol: `DMGD7N45SSD-13`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `dmgd7n45ssd-13-etched.step` / `dmgd7n45ssd-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmgd7n45ssd-13.step` / `dmgd7n45ssd-13.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/DMGD7N45SSD-13.pdf) (7 pp, sha256 `8727d05db9d94c79`, retrieved 2026-11-05, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmgd7n45ssd-13-datasheet.pdf)