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DMG9926USD-13

Public Made by Adom

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMG9926USD-13

Diodes Incorporated · MOSFETs · SO-8

DMG9926USD-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of N-channel MOSFET 1 (dual N-channel device rated 20 V V(BR)DSS, 8 A continuous ID at TA = +25°C).
2 G1 input Gate terminal of N-channel MOSFET 1; gate-source voltage is rated to 8 V (VGSS).
3 S2 passive Source terminal of N-channel MOSFET 2 (dual N-channel device rated 20 V V(BR)DSS, 8 A continuous ID at TA = +25°C).
4 G2 input Gate terminal of N-channel MOSFET 2; gate-source voltage is rated to 8 V (VGSS).
5 D2 passive Drain terminal of N-channel MOSFET 2 (drain-source voltage rated 20 V).
6 D2 passive Drain terminal of N-channel MOSFET 2 (drain-source voltage rated 20 V); pins 5 and 6 are both D2.
7 D1 passive Drain terminal of N-channel MOSFET 1 (drain-source voltage rated 20 V).
8 D1 passive Drain terminal of N-channel MOSFET 1 (drain-source voltage rated 20 V); pins 7 and 8 are both D1.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 20 V 2
Gate-Source Voltage VGSS 8 V 2
Drain Current (steady state) ID 8 A Steady state, TA = +25°C, Note 5 2
Drain Current (steady state) ID 6.7 A Steady state, TA = +70°C, Note 5 2
Pulsed Drain Current IDM 30 A Note 6, repetitive rating 2
Total Power Dissipation PD 1.3 W Note 5 2
Thermal Resistance, Junction to Ambient RθJA 96 °C/W Note 5 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 20V, VGS = 0V 2
Gate-Source Leakage IGSS 100 nA VGS = 8V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 0.5 0.9 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(ON) 19 24 mΩ VGS = 4.5V, ID = 8.2A 2
Static Drain-Source On-Resistance RDS(ON) 23 29 mΩ VGS = 2.5V, ID = 3.3A 2
Static Drain-Source On-Resistance RDS(ON) 29 37 mΩ VGS = 1.8V, ID = 2A 2
Diode Forward Voltage VSD 0.5 0.9 V VGS = 0V, IS = 1A 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminals Connections: See Diagram  Terminals: Finish - Matte Tin annealed over Copper lead 1

CAD (KiCad official)

  • Symbol: DMG9926USD-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dmg9926usd-13-etched.step / dmg9926usd-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmg9926usd-13.step / dmg9926usd-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 a9a3d876246f083b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF