component
DMG6602SVT-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMG6602SVT-VB
VBsemi Elec · MOSFETs · TSOP-6
DMG6602SVT-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (VGS max ±20 V). |
| 2 | S2 | passive | Source of the P-channel MOSFET (VDS -20 V, ID -3.4 A at TA = 25 °C). |
| 3 | G2 | input | Gate of the P-channel MOSFET (VGS max ±20 V). |
| 4 | D2 | passive | Drain of the P-channel MOSFET (VDS -20 V, ID -3.4 A at TA = 25 °C). |
| 5 | S1 | passive | Source of the N-channel MOSFET (VDS 20 V, ID 5.5 A at TA = 25 °C). |
| 6 | D1 | passive | Drain of the N-channel MOSFET (VDS 20 V, ID 5.5 A at TA = 25 °C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 20 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -20 | V | 1 | |||
| Gate-Source Voltage (N-Channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (P-Channel) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -3.4 | A | TJ = 150 °C, TA = 25 °C | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -2.3 | A | TJ = 150 °C, TA = 70 °C | 1 | ||
| Continuous Source Current (Diode Conduction) (N-Channel) | IS | 1.05 | A | Diode conduction | 1 | ||
| Continuous Source Current (Diode Conduction) (P-Channel) | IS | -1.05 | A | Diode conduction | 1 | ||
| Maximum Power Dissipation | PD | 1.15 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.73 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 93 | 110 | °C/W | t ≤ 5 s | 1 | |
| Maximum Junction-to-Ambient | RthJA | 130 | 150 | °C/W | Steady state | 1 | |
| Maximum Junction-to-Lead | RthJL | 75 | 90 | °C/W | Steady state | 1 | |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 0.8 | 1.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1.5 | -0.8 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage (N-Channel) | IGSS | -100 | 0.5 | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 |
| Gate-Body Leakage (P-Channel) | IGSS | -100 | -0.5 | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | µA | VDS = 16 V, VGS = 0 | 2 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | µA | VDS = -16 V, VGS = 0 | 2 | ||
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 5 | µA | VDS = 16 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -5 | µA | VDS = -16 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current (N-Channel) | ID(on) | 3.7 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current (P-Channel) | ID(on) | -3 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.022 | Ω | VGS = 10 V, ID = 2.5 A | 2 | ||
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 0.055 | Ω | VGS = -10 V, ID = -1.8 A | 2 | ||
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.03 | Ω | VGS = 4.5 V, ID = 2.0 A | 2 | ||
| Diode Forward Voltage (N-Channel) | VSD | 0.81 | 1.1 | V | IS = 1.05 A, VGS = 0 V | 2 | |
| Diode Forward Voltage (P-Channel) | VSD | -0.83 | -1.1 | V | IS = -1.05 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
DMG6602SVT-VB - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
dmg6602svt-vb-etched.step/dmg6602svt-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmg6602svt-vb.step/dmg6602svt-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (10 pp, sha256
02fd25d10565c237, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMG6602SVT-VB
**VBsemi Elec** · MOSFETs · TSOP-6
DMG6602SVT-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (VGS max ±20 V). |
| 2 | S2 | passive | Source of the P-channel MOSFET (VDS -20 V, ID -3.4 A at TA = 25 °C). |
| 3 | G2 | input | Gate of the P-channel MOSFET (VGS max ±20 V). |
| 4 | D2 | passive | Drain of the P-channel MOSFET (VDS -20 V, ID -3.4 A at TA = 25 °C). |
| 5 | S1 | passive | Source of the N-channel MOSFET (VDS 20 V, ID 5.5 A at TA = 25 °C). |
| 6 | D1 | passive | Drain of the N-channel MOSFET (VDS 20 V, ID 5.5 A at TA = 25 °C). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | | | 20 | V | | 1 |
| Drain-Source Voltage (P-Channel) | VDS | -20 | | | V | | 1 |
| Gate-Source Voltage (N-Channel) | VGS | -20 | | 20 | V | | 1 |
| Gate-Source Voltage (P-Channel) | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current (P-Channel) | ID | -3.4 | | | A | TJ = 150 °C, TA = 25 °C | 1 |
| Continuous Drain Current (P-Channel) | ID | -2.3 | | | A | TJ = 150 °C, TA = 70 °C | 1 |
| Continuous Source Current (Diode Conduction) (N-Channel) | IS | | | 1.05 | A | Diode conduction | 1 |
| Continuous Source Current (Diode Conduction) (P-Channel) | IS | -1.05 | | | A | Diode conduction | 1 |
| Maximum Power Dissipation | PD | | | 1.15 | W | TA = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 0.73 | W | TA = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RthJA | | 93 | 110 | °C/W | t ≤ 5 s | 1 |
| Maximum Junction-to-Ambient | RthJA | | 130 | 150 | °C/W | Steady state | 1 |
| Maximum Junction-to-Lead | RthJL | | 75 | 90 | °C/W | Steady state | 1 |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 0.8 | | 1.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1.5 | | -0.8 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Body Leakage (N-Channel) | IGSS | -100 | 0.5 | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 |
| Gate-Body Leakage (P-Channel) | IGSS | -100 | -0.5 | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | | | 1 | µA | VDS = 16 V, VGS = 0 | 2 |
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | | | -1 | µA | VDS = -16 V, VGS = 0 | 2 |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | | | 5 | µA | VDS = 16 V, VGS = 0 V, TJ = 55 °C | 2 |
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | | | -5 | µA | VDS = -16 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current (N-Channel) | ID(on) | 3.7 | | | A | VDS = 5 V, VGS = 10 V | 2 |
| On-State Drain Current (P-Channel) | ID(on) | -3 | | | A | VDS = -5 V, VGS = -10 V | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | | 0.022 | Ω | VGS = 10 V, ID = 2.5 A | 2 |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | | 0.055 | Ω | VGS = -10 V, ID = -1.8 A | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | | 0.03 | Ω | VGS = 4.5 V, ID = 2.0 A | 2 |
| Diode Forward Voltage (N-Channel) | VSD | | 0.81 | 1.1 | V | IS = 1.05 A, VGS = 0 V | 2 |
| Diode Forward Voltage (P-Channel) | VSD | | -0.83 | -1.1 | V | IS = -1.05 A, VGS = 0 V | 2 |
## CAD (KiCad official)
- Symbol: `DMG6602SVT-VB`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `dmg6602svt-vb-etched.step` / `dmg6602svt-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmg6602svt-vb.step` / `dmg6602svt-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603153004321120256) (10 pp, sha256 `02fd25d10565c237`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmg6602svt-vb-datasheet.pdf)