component
DMG6602SVT-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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page.json+8−5@@ -38,7 +38,7 @@ "number": "1", "name": "D1", "type": "passive",- "description": "Drain of Q1 N-channel MOSFET; VDSS = 30V, RDS(on) = 60m\u03a9 (typ.) / 100m\u03a9 (max) at VGS = 10V / 4.5V; continuous drain current ID = 3.4A at TA = +25\u00b0C."+ "description": "Drain of Q1 N-channel MOSFET; VDSS = 30V, RDS(on) = 60mΩ (typ.) / 100mΩ (max) at VGS = 10V / 4.5V; continuous drain current ID = 3.4A at TA = +25°C." }, { "number": "2",@@ -50,13 +50,13 @@ "number": "3", "name": "D2", "type": "passive",- "description": "Drain of Q2 P-channel MOSFET; VDSS = -30V, RDS(on) = 95m\u03a9 (typ.) / 140m\u03a9 (max) at VGS = -10V / -4.5V; continuous drain current ID = -2.8A at TA = +25\u00b0C."+ "description": "Drain of Q2 P-channel MOSFET; VDSS = -30V, RDS(on) = 95mΩ (typ.) / 140mΩ (max) at VGS = -10V / -4.5V; continuous drain current ID = -2.8A at TA = +25°C." }, { "number": "4", "name": "G2", "type": "input",- "description": "Gate of Q2 P-channel MOSFET; gate threshold voltage VGS(th) = -1.0V to -2.3V at ID = -250\u03bcA; maximum gate-source voltage VGSS = \u00b120V."+ "description": "Gate of Q2 P-channel MOSFET; gate threshold voltage VGS(th) = -1.0V to -2.3V at ID = -250μA; maximum gate-source voltage VGSS = ±20V." }, { "number": "5",@@ -68,7 +68,7 @@ "number": "6", "name": "G1", "type": "input",- "description": "Gate of Q1 N-channel MOSFET; gate threshold voltage VGS(th) = 1.0V to 2.3V at ID = 250\u03bcA; maximum gate-source voltage VGSS = \u00b120V."+ "description": "Gate of Q1 N-channel MOSFET; gate threshold voltage VGS(th) = 1.0V to 2.3V at ID = 250μA; maximum gate-source voltage VGSS = ±20V." } ], "provenance": {@@ -146,5 +146,8 @@ "docs/dmg6602svt-7-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }