component
DMG6601LVT-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
DMG6601LVT-7
Diodes Incorporated · MOSFETs · TSOT-26
DMG6601LVT-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1 | passive | Drain of the Q1 N-channel MOSFET, rated for a 30V drain-source voltage (VDSS) per the maximum ratings table. |
| 2 | S1 | passive | Source of the Q1 N-channel MOSFET, with Q1 gate-source voltage rated at ±12V (VGSS). |
| 3 | D2 | passive | Drain of the Q2 P-channel MOSFET, rated for a -30V drain-source voltage (VDSS) per the maximum ratings table. |
| 4 | G2 | input | Gate of the Q2 P-channel MOSFET, with gate-source voltage rated at ±12V (VGSS). |
| 5 | S2 | passive | Source of the Q2 P-channel MOSFET, with Q2 gate-source voltage rated at ±12V (VGSS). |
| 6 | G1 | input | Gate of the Q1 N-channel MOSFET, with gate-source voltage rated at ±12V (VGSS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (Q1, N-channel) | VDSS | 30 | V | 2 | |||
| Drain-Source Voltage (Q2, P-channel) | VDSS | -30 | V | 2 | |||
| Gate-Source Voltage (Q1) | VGSS | -12 | 12 | V | 2 | ||
| Gate-Source Voltage (Q2) | VGSS | -12 | 12 | V | 2 | ||
| Continuous Drain Current (Q1) | ID | 3.8 | A | VGS = 10V, steady state, TA = +25°C | 2 | ||
| Continuous Drain Current (Q2) | ID | -2.5 | A | VGS = 10V, steady state, TA = +25°C | 2 | ||
| Continuous Drain Current (Q1) | ID | 3 | A | VGS = 10V, steady state, TA = +70°C | 2 | ||
| Continuous Drain Current (Q2) | ID | -2 | A | VGS = 10V, steady state, TA = +70°C | 2 | ||
| Continuous Drain Current (Q1) | ID | 4.5 | A | VGS = 10V, t<10s, TA = +25°C | 2 | ||
| Continuous Drain Current (Q2) | ID | -3 | A | VGS = 10V, t<10s, TA = +25°C | 2 | ||
| Continuous Drain Current (Q1) | ID | 3.4 | A | VGS = 10V, t<10s, TA = +70°C | 2 | ||
| Continuous Drain Current (Q2) | ID | -2.3 | A | VGS = 10V, t<10s, TA = +70°C | 2 | ||
| Maximum Body Diode Forward Current (Q1) | IS | 1.5 | A | 2 | |||
| Maximum Body Diode Forward Current (Q2) | IS | -1.5 | A | 2 | |||
| Pulsed Drain Current (Q1) | IDM | 20 | A | 2 | |||
| Pulsed Drain Current (Q2) | IDM | -15 | A | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage (Q1) | BVDSS | 30 | V | VGS = 0V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current @TJ = +25°C (Q1) | IDSS | 1 | μA | VDS = 30V, VGS = 0V | 2 | ||
| Gate-Source Leakage (Q1) | IGSS | -100 | 100 | nA | VGS = ±12V, VDS = 0V | 2 | |
| Gate Threshold Voltage (Q1) | VGS(th) | 0.5 | 1 | 1.5 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance (Q1) | RDS(ON) | 34 | 55 | mΩ | VGS = 10V, ID = 3.4A | 2 | |
| Static Drain-Source On-Resistance (Q1) | RDS(ON) | 38 | 65 | mΩ | VGS = 4.5V, ID = 3A | 2 | |
| Static Drain-Source On-Resistance (Q1) | RDS(ON) | 49 | 85 | mΩ | VGS = 2.5V, ID = 2A | 2 | |
| Diode Forward Voltage (Q1) | VSD | 0.75 | 1 | V | VGS = 0V, IS = 1A | 2 | |
| Drain-Source Breakdown Voltage (Q2) | BVDSS | -30 | V | VGS = 0V, ID = -250μA | 3 | ||
| Zero Gate Voltage Drain Current @TJ = +25°C (Q2) | IDSS | -1 | μA | VDS = -30V, VGS = 0V | 3 | ||
| Gate-Source Leakage (Q2) | IGSS | -100 | 100 | nA | VGS = ±12V, VDS = 0V | 3 | |
| Gate Threshold Voltage (Q2) | VGS(th) | -0.4 | -0.8 | -1.2 | V | VDS = VGS, ID = -250μA | 3 |
| Static Drain-Source On-Resistance (Q2) | RDS(ON) | 70 | 110 | mΩ | VGS = -10V, ID = -2.3A | 3 | |
| Static Drain-Source On-Resistance (Q2) | RDS(ON) | 81 | 142 | mΩ | VGS = -4.5V, ID = -2A | 3 | |
| Static Drain-Source On-Resistance (Q2) | RDS(ON) | 105 | 190 | mΩ | VGS = -2.5V, ID = -1A | 3 | |
| Diode Forward Voltage (Q2) | VSD | -0.8 | -1 | V | VGS = 0V, IS = -1A | 3 | |
| Forward Transfer Admittance (Q1) | /Yfs/ | 6 | S | VDS = 5V, ID = 3.4A | 2 | ||
| Input Capacitance (Q1) | Ciss | 422 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance (Q1) | Coss | 41 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance (Q1) | Crss | 39 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Gate Resistance (Q1) | Rg | 1.26 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 2 | ||
| Total Gate Charge (VGS = 4.5V) (Q1) | Qg | 5.4 | nC | VGS = 10V, VDS = 15V, ID = 3.1A | 2 | ||
| Total Gate Charge (VGS = 10V) (Q1) | Qg | 12.3 | nC | VGS = 10V, VDS = 15V, ID = 3.1A | 2 | ||
| Gate-Source Charge (Q1) | Qgs | 0.8 | nC | VGS = 10V, VDS = 15V, ID = 3.1A | 2 | ||
| Gate-Drain Charge (Q1) | Qgd | 1.2 | nC | VGS = 10V, VDS = 15V, ID = 3.1A | 2 | ||
| Forward Transfer Admittance (Q2) | /Yfs/ | 5.3 | S | VDS = -5V, ID = -2.3A | 3 | ||
| Input Capacitance (Q2) | Ciss | 541 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 3 | ||
| Output Capacitance (Q2) | Coss | 46 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 3 | ||
| Reverse Transfer Capacitance (Q2) | Crss | 43 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 3 | ||
| Gate Resistance (Q2) | Rg | 16.9 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 3 | ||
| Total Gate Charge (VGS = -4.5V) (Q2) | Qg | 6.5 | nC | VGS = -10V, VDS = -15V, ID = -2.3A | 3 | ||
| Total Gate Charge (VGS = -10V) (Q2) | Qg | 13.8 | nC | VGS = -10V, VDS = -15V, ID = -2.3A | 3 | ||
| Gate-Source Charge (Q2) | Qgs | 1 | nC | VGS = -10V, VDS = -15V, ID = -2.3A | 3 | ||
| Gate-Drain Charge (Q2) | Qgd | 1.6 | nC | VGS = -10V, VDS = -15V, ID = -2.3A | 3 | ||
| Total Power Dissipation (Note 5) | PD | 0.85 | W | Note 5, TA = +25°C | 2 | ||
| Total Power Dissipation (Note 5) | PD | 0.54 | W | Note 5, TA = +70°C | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 147 | °C/W | Note 5, steady state | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 103 | °C/W | Note 5, t<10s | 2 | ||
| Total Power Dissipation (Note 6) | PD | 1.3 | W | Note 6, TA = +25°C | 2 | ||
| Total Power Dissipation (Note 6) | PD | 0.83 | W | Note 6, TA = +70°C | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 96 | °C/W | Note 6, steady state | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 67 | °C/W | Note 6, t<10s | 2 | ||
| Thermal Resistance, Junction to Case (Note 6) | RθJC | 36 | °C/W | Note 6 | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | Terminal Connections Indicator: See diagram Terminals: Finish NiPdAu over Copper Leadframe. Solderable | 1 |
CAD (KiCad official)
- Symbol:
DMG6601LVT-7 - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-26 (KiCad packages3D, STEP)
- 3D model files:
dmg6601lvt-7-etched.step/dmg6601lvt-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmg6601lvt-7.step/dmg6601lvt-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (9 pp, sha256
11f506c71a6f4249, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMG6601LVT-7
**Diodes Incorporated** · MOSFETs · TSOT-26
DMG6601LVT-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1 | passive | Drain of the Q1 N-channel MOSFET, rated for a 30V drain-source voltage (VDSS) per the maximum ratings table. |
| 2 | S1 | passive | Source of the Q1 N-channel MOSFET, with Q1 gate-source voltage rated at ±12V (VGSS). |
| 3 | D2 | passive | Drain of the Q2 P-channel MOSFET, rated for a -30V drain-source voltage (VDSS) per the maximum ratings table. |
| 4 | G2 | input | Gate of the Q2 P-channel MOSFET, with gate-source voltage rated at ±12V (VGSS). |
| 5 | S2 | passive | Source of the Q2 P-channel MOSFET, with Q2 gate-source voltage rated at ±12V (VGSS). |
| 6 | G1 | input | Gate of the Q1 N-channel MOSFET, with gate-source voltage rated at ±12V (VGSS). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (Q1, N-channel) | VDSS | | | 30 | V | | 2 |
| Drain-Source Voltage (Q2, P-channel) | VDSS | -30 | | | V | | 2 |
| Gate-Source Voltage (Q1) | VGSS | -12 | | 12 | V | | 2 |
| Gate-Source Voltage (Q2) | VGSS | -12 | | 12 | V | | 2 |
| Continuous Drain Current (Q1) | ID | | | 3.8 | A | VGS = 10V, steady state, TA = +25°C | 2 |
| Continuous Drain Current (Q2) | ID | -2.5 | | | A | VGS = 10V, steady state, TA = +25°C | 2 |
| Continuous Drain Current (Q1) | ID | | | 3 | A | VGS = 10V, steady state, TA = +70°C | 2 |
| Continuous Drain Current (Q2) | ID | -2 | | | A | VGS = 10V, steady state, TA = +70°C | 2 |
| Continuous Drain Current (Q1) | ID | | | 4.5 | A | VGS = 10V, t<10s, TA = +25°C | 2 |
| Continuous Drain Current (Q2) | ID | -3 | | | A | VGS = 10V, t<10s, TA = +25°C | 2 |
| Continuous Drain Current (Q1) | ID | | | 3.4 | A | VGS = 10V, t<10s, TA = +70°C | 2 |
| Continuous Drain Current (Q2) | ID | -2.3 | | | A | VGS = 10V, t<10s, TA = +70°C | 2 |
| Maximum Body Diode Forward Current (Q1) | IS | | | 1.5 | A | | 2 |
| Maximum Body Diode Forward Current (Q2) | IS | -1.5 | | | A | | 2 |
| Pulsed Drain Current (Q1) | IDM | | | 20 | A | | 2 |
| Pulsed Drain Current (Q2) | IDM | -15 | | | A | | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Drain-Source Breakdown Voltage (Q1) | BVDSS | 30 | | | V | VGS = 0V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current @TJ = +25°C (Q1) | IDSS | | | 1 | μA | VDS = 30V, VGS = 0V | 2 |
| Gate-Source Leakage (Q1) | IGSS | -100 | | 100 | nA | VGS = ±12V, VDS = 0V | 2 |
| Gate Threshold Voltage (Q1) | VGS(th) | 0.5 | 1 | 1.5 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance (Q1) | RDS(ON) | | 34 | 55 | mΩ | VGS = 10V, ID = 3.4A | 2 |
| Static Drain-Source On-Resistance (Q1) | RDS(ON) | | 38 | 65 | mΩ | VGS = 4.5V, ID = 3A | 2 |
| Static Drain-Source On-Resistance (Q1) | RDS(ON) | | 49 | 85 | mΩ | VGS = 2.5V, ID = 2A | 2 |
| Diode Forward Voltage (Q1) | VSD | | 0.75 | 1 | V | VGS = 0V, IS = 1A | 2 |
| Drain-Source Breakdown Voltage (Q2) | BVDSS | -30 | | | V | VGS = 0V, ID = -250μA | 3 |
| Zero Gate Voltage Drain Current @TJ = +25°C (Q2) | IDSS | -1 | | | μA | VDS = -30V, VGS = 0V | 3 |
| Gate-Source Leakage (Q2) | IGSS | -100 | | 100 | nA | VGS = ±12V, VDS = 0V | 3 |
| Gate Threshold Voltage (Q2) | VGS(th) | -0.4 | -0.8 | -1.2 | V | VDS = VGS, ID = -250μA | 3 |
| Static Drain-Source On-Resistance (Q2) | RDS(ON) | | 70 | 110 | mΩ | VGS = -10V, ID = -2.3A | 3 |
| Static Drain-Source On-Resistance (Q2) | RDS(ON) | | 81 | 142 | mΩ | VGS = -4.5V, ID = -2A | 3 |
| Static Drain-Source On-Resistance (Q2) | RDS(ON) | | 105 | 190 | mΩ | VGS = -2.5V, ID = -1A | 3 |
| Diode Forward Voltage (Q2) | VSD | | -0.8 | -1 | V | VGS = 0V, IS = -1A | 3 |
| Forward Transfer Admittance (Q1) | /Yfs/ | | 6 | | S | VDS = 5V, ID = 3.4A | 2 |
| Input Capacitance (Q1) | Ciss | | 422 | | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 |
| Output Capacitance (Q1) | Coss | | 41 | | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance (Q1) | Crss | | 39 | | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 |
| Gate Resistance (Q1) | Rg | | 1.26 | | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 2 |
| Total Gate Charge (VGS = 4.5V) (Q1) | Qg | | 5.4 | | nC | VGS = 10V, VDS = 15V, ID = 3.1A | 2 |
| Total Gate Charge (VGS = 10V) (Q1) | Qg | | 12.3 | | nC | VGS = 10V, VDS = 15V, ID = 3.1A | 2 |
| Gate-Source Charge (Q1) | Qgs | | 0.8 | | nC | VGS = 10V, VDS = 15V, ID = 3.1A | 2 |
| Gate-Drain Charge (Q1) | Qgd | | 1.2 | | nC | VGS = 10V, VDS = 15V, ID = 3.1A | 2 |
| Forward Transfer Admittance (Q2) | /Yfs/ | | 5.3 | | S | VDS = -5V, ID = -2.3A | 3 |
| Input Capacitance (Q2) | Ciss | | 541 | | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 3 |
| Output Capacitance (Q2) | Coss | | 46 | | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 3 |
| Reverse Transfer Capacitance (Q2) | Crss | | 43 | | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 3 |
| Gate Resistance (Q2) | Rg | | 16.9 | | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 3 |
| Total Gate Charge (VGS = -4.5V) (Q2) | Qg | | 6.5 | | nC | VGS = -10V, VDS = -15V, ID = -2.3A | 3 |
| Total Gate Charge (VGS = -10V) (Q2) | Qg | | 13.8 | | nC | VGS = -10V, VDS = -15V, ID = -2.3A | 3 |
| Gate-Source Charge (Q2) | Qgs | | 1 | | nC | VGS = -10V, VDS = -15V, ID = -2.3A | 3 |
| Gate-Drain Charge (Q2) | Qgd | | 1.6 | | nC | VGS = -10V, VDS = -15V, ID = -2.3A | 3 |
| Total Power Dissipation (Note 5) | PD | | 0.85 | | W | Note 5, TA = +25°C | 2 |
| Total Power Dissipation (Note 5) | PD | | 0.54 | | W | Note 5, TA = +70°C | 2 |
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | | 147 | | °C/W | Note 5, steady state | 2 |
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | | 103 | | °C/W | Note 5, t<10s | 2 |
| Total Power Dissipation (Note 6) | PD | | 1.3 | | W | Note 6, TA = +25°C | 2 |
| Total Power Dissipation (Note 6) | PD | | 0.83 | | W | Note 6, TA = +70°C | 2 |
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | | 96 | | °C/W | Note 6, steady state | 2 |
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | | 67 | | °C/W | Note 6, t<10s | 2 |
| Thermal Resistance, Junction to Case (Note 6) | RθJC | | 36 | | °C/W | Note 6 | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | | Terminal Connections Indicator: See diagram Terminals: Finish NiPdAu over Copper Leadframe. Solderable | 1 |
## CAD (KiCad official)
- Symbol: `DMG6601LVT-7`
- Footprint: `Package_TO_SOT_SMD:TSOT-23-6`
- 3D model: TSOT-26 (KiCad packages3D, STEP)
- 3D model files: `dmg6601lvt-7-etched.step` / `dmg6601lvt-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmg6601lvt-7.step` / `dmg6601lvt-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885264386674688) (9 pp, sha256 `11f506c71a6f4249`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmg6601lvt-7-datasheet.pdf)