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DMG4800LSDQ-13

Public Made by Adom

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMG4800LSDQ-13

Diodes Incorporated · MOSFETs · SO-8

DMG4800LSDQ-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1.
2 G1 input Gate of N-channel MOSFET 1; VGS rated ±25 V maximum.
3 S2 passive Source of N-channel MOSFET 2.
4 G2 input Gate of N-channel MOSFET 2; VGS rated ±25 V maximum.
5 D2 passive Drain of N-channel MOSFET 2, connected to pin 6; VDSS 30 V.
6 D2 passive Drain of N-channel MOSFET 2, connected to pin 5; VDSS 30 V.
7 D1 passive Drain of N-channel MOSFET 1, connected to pin 8; VDSS 30 V.
8 D1 passive Drain of N-channel MOSFET 1, connected to pin 7; VDSS 30 V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250μA 3
Zero Gate Voltage Drain Current IDSS 1 μA TJ = +25°C, VDS = 30V, VGS = 0V 3
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V, VDS = 0V 3
Gate Threshold Voltage VGS(TH) 0.8 1.6 V VDS = VGS, ID = 250μA 3
Static Drain-Source On-Resistance RDS(ON) 12 16 mΩ VGS = 10V, ID = 9A 3
Static Drain-Source On-Resistance RDS(ON) 16 22 mΩ VGS = 4.5V, ID = 7A 3
Diode Forward Voltage VSD 0.72 0.94 V VGS = 0V, IS = 1A 3
Drain-Source Voltage VDSS 30 V TA = +25°C 2
Gate-Source Voltage VGSS -25 25 V TA = +25°C 2
Continuous Drain Current, steady state ID 7.5 A VGS = 10V, TA = +25°C, steady state 2
Continuous Drain Current, steady state ID 6 A VGS = 10V, TA = +70°C, steady state 2
Continuous Drain Current, t < 10s ID 9.8 A VGS = 10V, TA = +25°C, t < 10s 2
Continuous Drain Current, t < 10s ID 7.7 A VGS = 10V, TA = +70°C, t < 10s 2
Continuous Drain Current, steady state ID 6.4 A VGS = 4.5V, TA = +25°C, steady state 2
Continuous Drain Current, steady state ID 5 A VGS = 4.5V, TA = +70°C, steady state 2
Continuous Drain Current, t < 10s ID 8.4 A VGS = 4.5V, TA = +25°C, t < 10s 2
Continuous Drain Current, t < 10s ID 6.6 A VGS = 4.5V, TA = +70°C, t < 10s 2
Maximum Continuous Body Diode Forward Current IS 2 A 2
Pulsed Drain Current IDM 42 A 10µs Pulse, Duty Cycle = 1% 2
Avalanche Current IAR 17 A L = 0.1mH 2
Repetitive Avalanche Energy EAR 14 mJ L = 0.1mH 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Total Power Dissipation (Note 8) PD 1.17 W Minimum recommended pad layout 2
Thermal Resistance, Junction to Ambient (Note 8), steady state RθJA 107 °C/W Steady State, minimum recommended pad layout 2
Thermal Resistance, Junction to Ambient (Note 8), t < 10s RθJA 61 °C/W t < 10s, minimum recommended pad layout 2
Total Power Dissipation (Note 5) PD 1.5 W 1inch square copper plate 2
Thermal Resistance, Junction to Ambient (Note 5), steady state RθJA 83 °C/W Steady State, 1inch square copper plate 2
Thermal Resistance, Junction to Ambient (Note 5), t < 10s RθJA 49 °C/W t < 10s, 1inch square copper plate 2
Thermal Resistance, Junction to Case RθJC 14.5 °C/W 2
Forward Transfer Admittance /Yfs/ 8 S VDS = 10V, ID = 9A 3
Input Capacitance Ciss 798 pF VDS = 10V, VGS = 0V, f = 1.0MHz 3
Output Capacitance Coss 128 pF VDS = 10V, VGS = 0V, f = 1.0MHz 3
Reverse Transfer Capacitance Crss 122 pF VDS = 10V, VGS = 0V, f = 1.0MHz 3
Gate Resistance Rg 1.37 Ω VDS = 0V, VGS = 0V, f = 1MHz 3
Total Gate Charge Qg 8.56 nC VGS = 5V, VDS = 15V, ID = 9A 3
Gate-Source Charge Qgs 1.8 nC VGS = 5V, VDS = 15V, ID = 9A 3
Gate-Drain Charge Qgd 2.5 nC VGS = 5V, VDS = 15V, ID = 9A 3
Turn-On Delay Time tD(ON) 5.03 ns VDD = 15V, VGEN = 10V, RL = 15Ω, RG = 6Ω, ID = 1A 3
Turn-On Rise Time tR 4.5 ns VDD = 15V, VGEN = 10V, RL = 15Ω, RG = 6Ω, ID = 1A 3
Turn-Off Delay Time tD(OFF) 26.33 ns VDD = 15V, VGEN = 10V, RL = 15Ω, RG = 6Ω, ID = 1A 3
Turn-Off Fall Time tF 8.55 ns VDD = 15V, VGEN = 10V, RL = 15Ω, RG = 6Ω, ID = 1A 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections Indicator: See Diagram  Terminals: Finish, Matte Tin Annealed over Copper Leadframe. 1

CAD (KiCad official)

  • Symbol: DMG4800LSDQ-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dmg4800lsdq-13-etched.step / dmg4800lsdq-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmg4800lsdq-13.step / dmg4800lsdq-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 cb48fab8b54527b1, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF