# DMG4800LSD-13

**Diodes Incorporated** · MOSFETs · SO-8

DMG4800LSD-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1 (VDSS 30V, ID up to 9.8A at VGS=10V, TA=+25°C). |
| 2 | G1 | input | Gate of N-channel MOSFET 1 (VGSS ±25V, threshold 0.8V to 1.6V). |
| 3 | S2 | passive | Source of N-channel MOSFET 2 (VDSS 30V, ID up to 9.8A at VGS=10V, TA=+25°C). |
| 4 | G2 | input | Gate of N-channel MOSFET 2 (VGSS ±25V, threshold 0.8V to 1.6V). |
| 5 | D2 | passive | Drain of N-channel MOSFET 2, tied to pin 6 (VDSS 30V, RDS(ON) max 16mΩ at VGS=10V). |
| 6 | D2 | passive | Drain of N-channel MOSFET 2, tied to pin 5 (VDSS 30V, RDS(ON) max 16mΩ at VGS=10V). |
| 7 | D1 | passive | Drain of N-channel MOSFET 1, tied to pin 8 (VDSS 30V, RDS(ON) max 16mΩ at VGS=10V). |
| 8 | D1 | passive | Drain of N-channel MOSFET 1, tied to pin 7 (VDSS 30V, RDS(ON) max 16mΩ at VGS=10V). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS = 0V, ID = 250μA | 3 |
| Zero Gate Voltage Drain Current, TJ = +25°C | IDSS |  |  | 1 | μA | VDS = 30V, VGS = 0V | 3 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ±20V, VDS = 0V | 3 |
| Gate Threshold Voltage | VGS(TH) | 0.8 |  | 1.6 | V | VDS = VGS, ID = 250μA | 3 |
| Static Drain-Source On-Resistance (VGS = 10V) | RDS(ON) |  | 12 | 16 | mΩ | VGS = 10V, ID = 9A | 3 |
| Static Drain-Source On-Resistance (VGS = 4.5V) | RDS(ON) |  | 16 | 22 | mΩ | VGS = 4.5V, ID = 7A | 3 |
| Diode Forward Voltage | VSD |  | 0.72 | 0.94 | V | VGS = 0V, IS = 1A | 3 |
| Drain-Source Voltage | VDSS |  |  | 30 | V | TA = +25°C | 2 |
| Gate-Source Voltage | VGSS | -25 |  | 25 | V |  | 2 |
| Continuous Drain Current, steady state (VGS = 10V) | ID |  |  | 7.5 | A | VGS = 10V, steady state, TA = +25°C | 2 |
| Continuous Drain Current, steady state (VGS = 10V) | ID |  |  | 6 | A | VGS = 10V, steady state, TA = +70°C | 2 |
| Continuous Drain Current, t < 10s (VGS = 10V) | ID |  |  | 9.8 | A | VGS = 10V, t < 10s, TA = +25°C | 2 |
| Continuous Drain Current, t < 10s (VGS = 10V) | ID |  |  | 7.7 | A | VGS = 10V, t < 10s, TA = +70°C | 2 |
| Continuous Drain Current, steady state (VGS = 4.5V) | ID |  |  | 6.4 | A | VGS = 4.5V, steady state, TA = +25°C | 2 |
| Continuous Drain Current, steady state (VGS = 4.5V) | ID |  |  | 5 | A | VGS = 4.5V, steady state, TA = +70°C | 2 |
| Continuous Drain Current, t < 10s (VGS = 4.5V) | ID |  |  | 8.4 | A | VGS = 4.5V, t < 10s, TA = +25°C | 2 |
| Continuous Drain Current, t < 10s (VGS = 4.5V) | ID |  |  | 6.6 | A | VGS = 4.5V, t < 10s, TA = +70°C | 2 |
| Maximum Continuous Body Diode Forward Current | IS |  |  | 2 | A | Note 5 | 2 |
| Pulsed Drain Current | IDM |  |  | 42 | A | 10µs pulse, duty cycle = 1% | 2 |
| Avalanche Current | IAR |  |  | 17 | A | L = 0.1mH | 2 |
| Repetitive Avalanche Energy | EAR |  |  | 14 | mJ | L = 0.1mH | 2 |
| Total Power Dissipation (minimum recommended pad layout) | PD |  |  | 1.17 | W | Note 8 | 2 |
| Total Power Dissipation (1 inch square copper plate) | PD |  |  | 1.5 | W | Note 5 | 2 |
| Thermal Resistance, Junction to Ambient, steady state | RθJA |  |  | 107 | °C/W | Note 8, steady state | 2 |
| Thermal Resistance, Junction to Ambient, t < 10s | RθJA |  |  | 61 | °C/W | Note 8, t < 10s | 2 |
| Thermal Resistance, Junction to Ambient, steady state | RθJA |  |  | 83 | °C/W | Note 5, steady state | 2 |
| Thermal Resistance, Junction to Ambient, t < 10s | RθJA |  |  | 49 | °C/W | Note 5, t < 10s | 2 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 14.5 | °C/W |  | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin |  Terminal Connections Indicator: See Diagram  Terminals: Finish, Matte Tin Annealed over Copper Leadframe. | 1 |

## CAD (KiCad official)

- Symbol: `DMG4800LSD-13`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `dmg4800lsd-13-etched.step` / `dmg4800lsd-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmg4800lsd-13.step` / `dmg4800lsd-13.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8560078745781358592) (8 pp, sha256 `cb48fab8b54527b1`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmg4800lsd-13-datasheet.pdf)