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DMG4496SSS-13

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMG4496SSS-13

Diodes Incorporated · MOSFETs · SO-8

DMG4496SSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, tied to the other source pins (2, 3) in the internal schematic.
2 S passive Source terminal of the N-channel MOSFET, tied to the other source pins (1, 3) in the internal schematic.
3 S passive Source terminal of the N-channel MOSFET, tied to the other source pins (1, 2) in the internal schematic.
4 G input Gate terminal; VGS rated ±25 V maximum with threshold of 0.8 to 2.0 V.
5 D passive Drain terminal, connected to pins 6, 7 and 8; VDSS 30 V, continuous ID 10 A at TA = +25°C.
6 D passive Drain terminal, connected to pins 5, 7 and 8; VDSS 30 V, continuous ID 10 A at TA = +25°C.
7 D passive Drain terminal, connected to pins 5, 6 and 8; VDSS 30 V, continuous ID 10 A at TA = +25°C.
8 D passive Drain terminal, connected to pins 5, 6 and 7; VDSS 30 V, continuous ID 10 A at TA = +25°C.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 30V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±25V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 0.8 1.2 2 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(ON) 16 21.5 mΩ VGS = 10V, ID = 10A 2
Static Drain-Source On-Resistance RDS(ON) 22 29 mΩ VGS = 4.5V, ID = 7.5A 2
Diode Forward Voltage VSD 0.7 1 V VGS = 0V, IS = 1A 2
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -25 25 V 2
Continuous Drain Current (steady state) ID 10 A TA = +25°C (Note 6) 2
Continuous Drain Current (steady state) ID 6 A TA = +85°C (Note 6) 2
Pulsed Drain Current IDM 60 A Note 7 2
Avalanche Current IAR 8 A Notes 7 & 8 2
Repetitive Avalanche Energy EAR 3.2 mJ L = 0.1mH (Notes 7 & 8) 2
Power Dissipation PD 1.42 W Note 6 2
Thermal Resistance, Junction to Ambient RθJA 88.49 °C/W TA = +25°C (Note 6) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections Indicator: See diagram  Terminals: Finish  Matte Tin annealed over Copper leadframe. 1

CAD (KiCad official)

  • Symbol: DMG4496SSS-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dmg4496sss-13-etched.step / dmg4496sss-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmg4496sss-13.step / dmg4496sss-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 0c29795399d78526, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF