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DMG4413LSS-13

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMG4413LSS-13

Diodes Incorporated · MOSFETs · SO-8

DMG4413LSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET (pins 1-3 are source), with VDSS of -30V and continuous ID up to -12A at VGS = -10V.
2 S passive Source of the P-channel MOSFET (pins 1-3 are source), with VDSS of -30V and continuous ID up to -12A at VGS = -10V.
3 S passive Source of the P-channel MOSFET (pins 1-3 are source), with VDSS of -30V and continuous ID up to -12A at VGS = -10V.
4 G input Gate of the P-channel MOSFET, rated for VGSS of ±20V with a threshold VGS(TH) of -1.1V min to -2.1V max.
5 D passive Drain of the P-channel MOSFET (pins 5-8 are drain), with VDSS of -30V and pulsed IDM of -45A.
6 D passive Drain of the P-channel MOSFET (pins 5-8 are drain), with VDSS of -30V and pulsed IDM of -45A.
7 D passive Drain of the P-channel MOSFET (pins 5-8 are drain), with VDSS of -30V and pulsed IDM of -45A.
8 D passive Drain of the P-channel MOSFET (pins 5-8 are drain), with VDSS of -30V and pulsed IDM of -45A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30V, VGS = 0V 2
Gate-Source Leakage IGSS -1 1 µA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) -1.1 -1.6 -2.1 V VDS = VGS, ID = -250µA 2
Static Drain-Source On-Resistance RDS(ON) 6.3 7.5 mΩ VGS = -10V, ID = -13A 2
Static Drain-Source On-Resistance RDS(ON) 7.9 10.2 mΩ VGS = -4.5V, ID = -10A 2
Diode Forward Voltage VSD -0.7 -1 V VGS = 0V, IS = -2.7A 2
Drain-Source Voltage VDSS -30 V TA = +25°C 2
Gate-Source Voltage VGSS -20 20 V TA = +25°C 2
Continuous Drain Current, steady state ID -12 A VGS = -10V, TA = +25°C, Note 6 2
Continuous Drain Current, steady state ID -10 A VGS = -10V, TA = +70°C, Note 6 2
Continuous Drain Current, t<10s ID -22 A VGS = -10V, TA = +25°C, Note 6 2
Continuous Drain Current, t<10s ID -17 A VGS = -10V, TA = +70°C, Note 6 2
Continuous Drain Current, steady state ID -8 A VGS = -4.5V, TA = +70°C, Note 6 2
Continuous Drain Current, t<10s ID -18 A VGS = -4.5V, TA = +25°C, Note 6 2
Continuous Drain Current, t<10s ID -14 A VGS = -4.5V, TA = +70°C, Note 6 2
Pulsed Drain Current IDM -45 A 10µs Pulse, Duty Cycle = 1% 2
Maximum Body Diode Continuous Current IS -4 A 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Total Power Dissipation PD 1.7 W TA = +25°C, Note 5 2
Total Power Dissipation PD 1.1 W TA = +70°C, Note 5 2
Total Power Dissipation PD 2.2 W TA = +25°C, Note 6 2
Total Power Dissipation PD 1.4 W TA = +70°C, Note 6 2
Thermal Resistance, Junction to Ambient RθJA 74 °C/W Steady State, Note 5 2
Thermal Resistance, Junction to Ambient RθJA 22 °C/W t<10s, Note 5 2
Thermal Resistance, Junction to Ambient RθJA 56 °C/W Steady State, Note 6 2
Thermal Resistance, Junction to Ambient RθJA 17 °C/W t<10s, Note 6 2
Thermal Resistance, Junction to Case RθJC 2.5 °C/W Steady State, Note 6 2
Forward Transconductance gfs 26 S VDS = -15V, ID = -13A 2
Input Capacitance Ciss 4965 pF VDS = -15V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 1487 pF VDS = -15V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 711 pF VDS = -15V, VGS = 0V, f = 1.0MHz 2
Gate Resistance RG 7.3 Ω VDS = 0V, VGS = 0V, f = 1.0MHz 2
Total Gate Charge QG 46 nC VDS = -15V, VGS = -5V, ID = -13A 2
Gate-Source Charge QGS 17 nC VDS = -15V, VGS = -5V, ID = -13A 2
Gate-Drain Charge QGD 16 nC VDS = -15V, VGS = -5V, ID = -13A 2
Turn-On Delay Time tD(ON) 15 ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω 2
Rise Time tR 9 ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω 2
Turn-Off Delay Time tD(OFF) 160 ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω 2
Fall Time tF 66 ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections Indicator: See Diagram Below  Terminals: Finish  Matte Tin Annealed over Copper Lead 1

CAD (KiCad official)

  • Symbol: DMG4413LSS-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dmg4413lss-13-etched.step / dmg4413lss-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmg4413lss-13.step / dmg4413lss-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 d5ab3939e0205dba, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF