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DMG4407SSS-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMG4407SSS-HXY

HXY MOSFET · MOSFETs · SOP-8

DMG4407SSS-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, one of three source pins tied together (VDS rated -30V).
2 S passive Source of the P-channel MOSFET, one of three source pins tied together (VDS rated -30V).
3 S passive Source of the P-channel MOSFET, one of three source pins tied together (VDS rated -30V).
4 G input Gate of the P-channel MOSFET, with absolute maximum VGS of ±20V and VGS(th) of -1.2V to -2.5V.
5 D passive Drain of the P-channel MOSFET, one of four drain pins tied together (ID -15A continuous at TA=25℃, VDS -30V).
6 D passive Drain of the P-channel MOSFET, one of four drain pins tied together (ID -15A continuous at TA=25℃, VDS -30V).
7 D passive Drain of the P-channel MOSFET, one of four drain pins tied together (ID -15A continuous at TA=25℃, VDS -30V).
8 D passive Drain of the P-channel MOSFET, one of four drain pins tied together (ID -15A continuous at TA=25℃, VDS -30V).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current (TA=25℃) ID -15 A VGS @ -10V 1
Continuous Drain Current (TA=70℃) ID -11 A VGS @ -10V 1
Pulsed Drain Current IDM -56 A 1
Single Pulse Avalanche Energy EAS 151 mJ 1
Avalanche Current IAS -55 A 1
Total Power Dissipation (TA=25℃) PD 1.5 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 5.8 8.7 mΩ VGS=-10V, ID=-12A 2
Static Drain-Source On-Resistance RDS(ON) 8.5 13.5 mΩ VGS=-4.5V, ID=-10A 2
Gate Threshold Voltage VGS(th) -1.2 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current (TJ=25℃) IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current (TJ=55℃) IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
Continuous Source Current IS -14 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -56 A 2
VGS(th) Temperature Coefficient ΔVGS(th) 5.04 mV/℃ 2
BVDSS Temperature Coefficient ΔBVDSS/ΔTJ -0.018 V/℃ Reference to 25℃, ID=-1mA 2
Forward Transconductance gfs 25 S VDS=-5V, ID=-12A 2
Total Gate Charge (-4.5V) Qg 30 nC VDS=-15V, VGS=-4.5V, ID=-12A 2
Gate-Source Charge Qgs 10 nC 2
Gate-Drain Charge Qgd 10.4 nC 2
Turn-On Delay Time Td(on) 9.4 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Rise Time Tr 10.2 ns 2
Turn-Off Delay Time Td(off) 117 ns 2
Fall Time Tf 24 ns 2
Input Capacitance Ciss 3448 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 508 pF VDS=-15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 421 pF VDS=-15V, VGS=0V, f=1MHz 2
Reverse Recovery Time trr 19.4 nS IF=-10A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 9.1 nC IF=-10A, dI/dt=100A/µs, TJ=25℃ 2
Thermal Resistance Junction-Ambient (t≦10s) RθJA 40 ℃/W t≦10s 1
Thermal Resistance Junction-Ambient (steady state) RθJA 75 ℃/W 1
Thermal Resistance Junction-Case RθJC 24 ℃/W 1

CAD (KiCad official)

  • Symbol: DMG4407SSS-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: dmg4407sss-hxy-etched.step / dmg4407sss-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmg4407sss-hxy.step / dmg4407sss-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 a71506c0cfcdba5f, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF