component
DMG3418L-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownDMG3418L-7
Diodes Incorporated · MOSFETs · SOT-23
DMG3418L-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel enhancement MOSFET, with VGS(TH) of 0.5 V to 1.5 V at ID = 250µA and absolute maximum VGSS of 12 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with the body diode running to drain, VSD max 1.2 V at IS = 2.0A. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET, rated VDSS 30 V and ID 4.0 A continuous at TA = +25°C (15 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30V, VGS = 0V | 2 | ||
| Gate-Body Leakage | IGSS | 100 | nA | VGS = ±12V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 0.5 | 1.5 | V | VDS = VGS, ID = 250µA | 2 | |
| Static Drain-Source On-Resistance, VGS = 10V, ID = 4A | RDS(ON) | 25 | 60 | mΩ | VGS = 10V, ID = 4A | 2 | |
| Static Drain-Source On-Resistance, VGS = 4.5V, ID = 3A | RDS(ON) | 30 | 70 | mΩ | VGS = 4.5V, ID = 3A | 2 | |
| Static Drain-Source On-Resistance, VGS = 2.5V, ID = 2A | RDS(ON) | 50 | 150 | mΩ | VGS = 2.5V, ID = 2A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 2.0A | 2 | ||
| Drain-Source Voltage | VDSS | 30 | V | 2 | |||
| Gate-Source Voltage | VGSS | 12 | V | 2 | |||
| Drain Current (Note 5) | ID | 4 | A | TA = +25°C (Note 5) | 2 | ||
| Drain Current (Note 5) | ID | 3.1 | A | TA = +70°C (Note 5) | 2 | ||
| Drain Current Pulsed | IDM | 15 | A | Note 6, repetitive, pulse width limited by junction temperature | 2 | ||
| Total Power Dissipation (Note 5) | PD | 1.4 | W | TA = +25°C (Note 5) | 2 | ||
| Total Power Dissipation (Note 5) | PD | 0.9 | W | TA = +70°C (Note 5) | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 90 | °C/W | @TA = +25°C (Note 5) | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
DMG3418L-7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmg3418l-7-etched.step/dmg3418l-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmg3418l-7.step/dmg3418l-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
669b540f6da13b3e, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).