component
DMG3415U-7-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMG3415U-7-VB
VBsemi Elec · MOSFETs · SOT-23
DMG3415U-7-VB from VBsemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with maximum gate-source voltage of ±8 V and threshold of -0.45 to -1 V. |
| 2 | S | passive | Source of the P-channel MOSFET, with continuous source (diode) current up to -2.5 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -20 V and continuous drain current of -5 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -20 | V | VGS = 0 V, ID = - 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.45 | -1 | V | VDS = VGS, ID = - 250 μA | 2 | |
| Gate-Source Leakage | IGSS | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VGS = 0 V, VDS = - 12 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | μA | VGS = 0 V, VDS = - 12 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -150 | μA | VGS = 0 V, VDS = - 12 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | -10 | A | VGS = - 4.5 V, VDS ≤ - 5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.034 | Ω | VGS = - 4.5 V, ID = - 3.5 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.066 | Ω | VGS = - 4.5 V, ID = - 3.5 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.075 | Ω | VGS = - 4.5 V, ID = - 3.5 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.046 | Ω | VGS = - 2.5 V, ID = - 3 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.067 | Ω | VGS = - 1.8 V, ID = - 2 A | 2 | ||
| Input Capacitance | Ciss | 695 | 870 | pF | VGS = 0 V, VDS = - 6 V, f = 1 MHz | 2 | |
| Output Capacitance | Coss | 265 | 335 | pF | VGS = 0 V, VDS = - 6 V, f = 1 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 190 | 240 | pF | VGS = 0 V, VDS = - 6 V, f = 1 MHz | 2 | |
| Total Gate Charge | Qg | 8.4 | 13 | nC | VGS = - 4.5 V, VDS = - 6 V, ID = - 3.85 A | 2 | |
| Gate Resistance | Rg | 4.1 | 8.2 | 12.3 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 26 | ns | VDD = - 6 V, RL = 1.6 Ω, ID ≅ - 3.85 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | ||
| Rise Time | tr | 19 | 29 | ns | VDD = - 6 V, RL = 1.6 Ω, ID ≅ - 3.85 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 28 | 42 | ns | VDD = - 6 V, RL = 1.6 Ω, ID ≅ - 3.85 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 13 | 20 | ns | VDD = - 6 V, RL = 1.6 Ω, ID ≅ - 3.85 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Source-Drain Pulsed Current | ISM | -20 | A | 2 | |||
| Forward Voltage | VSD | -0.8 | -1.2 | V | IF = - 2 A, VGS = 0 V | 2 | |
| Forward Transconductance | gfs | 7 | S | VDS = - 5 V, ID = - 1.6 A | 2 | ||
| Drain-Source Voltage | VDS | -20 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -8 | 8 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | -5 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -3 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -2.5 | A | TC = 25 °C | 1 | ||
| Pulsed Drain Current | IDM | -20 | A | TC = 25 °C | 1 | ||
| Single Pulse Avalanche Current | IAS | -11 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 6 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.67 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 175 | °C/W | PCB Mount | 1 | ||
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 75 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
DMG3415U-7-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmg3415u-7-vb-etched.step/dmg3415u-7-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmg3415u-7-vb.step/dmg3415u-7-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
195d731f76564ce9, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMG3415U-7-VB
**VBsemi Elec** · MOSFETs · SOT-23
DMG3415U-7-VB from VBsemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with maximum gate-source voltage of ±8 V and threshold of -0.45 to -1 V. |
| 2 | S | passive | Source of the P-channel MOSFET, with continuous source (diode) current up to -2.5 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -20 V and continuous drain current of -5 A at TC = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -20 | | | V | VGS = 0 V, ID = - 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -0.45 | | -1 | V | VDS = VGS, ID = - 250 μA | 2 |
| Gate-Source Leakage | IGSS | | | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VGS = 0 V, VDS = - 12 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -50 | μA | VGS = 0 V, VDS = - 12 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -150 | μA | VGS = 0 V, VDS = - 12 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | -10 | | | A | VGS = - 4.5 V, VDS ≤ - 5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.034 | | Ω | VGS = - 4.5 V, ID = - 3.5 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.066 | Ω | VGS = - 4.5 V, ID = - 3.5 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.075 | Ω | VGS = - 4.5 V, ID = - 3.5 A, TJ = 175 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.046 | | Ω | VGS = - 2.5 V, ID = - 3 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.067 | | Ω | VGS = - 1.8 V, ID = - 2 A | 2 |
| Input Capacitance | Ciss | | 695 | 870 | pF | VGS = 0 V, VDS = - 6 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 265 | 335 | pF | VGS = 0 V, VDS = - 6 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 190 | 240 | pF | VGS = 0 V, VDS = - 6 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg | | 8.4 | 13 | nC | VGS = - 4.5 V, VDS = - 6 V, ID = - 3.85 A | 2 |
| Gate Resistance | Rg | 4.1 | 8.2 | 12.3 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | | 26 | ns | VDD = - 6 V, RL = 1.6 Ω, ID ≅ - 3.85 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 19 | 29 | ns | VDD = - 6 V, RL = 1.6 Ω, ID ≅ - 3.85 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 28 | 42 | ns | VDD = - 6 V, RL = 1.6 Ω, ID ≅ - 3.85 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 13 | 20 | ns | VDD = - 6 V, RL = 1.6 Ω, ID ≅ - 3.85 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Source-Drain Pulsed Current | ISM | | | -20 | A | | 2 |
| Forward Voltage | VSD | | -0.8 | -1.2 | V | IF = - 2 A, VGS = 0 V | 2 |
| Forward Transconductance | gfs | | 7 | | S | VDS = - 5 V, ID = - 1.6 A | 2 |
| Drain-Source Voltage | VDS | | | -20 | V | TC = 25 °C | 1 |
| Gate-Source Voltage | VGS | -8 | | 8 | V | TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | -5 | A | TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | -3 | A | TC = 125 °C | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | -2.5 | A | TC = 25 °C | 1 |
| Pulsed Drain Current | IDM | | | -20 | A | TC = 25 °C | 1 |
| Single Pulse Avalanche Current | IAS | | | -11 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 6 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 2 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 0.67 | W | TC = 125 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA | | | 175 | °C/W | PCB Mount | 1 |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | | | 75 | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `DMG3415U-7-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `dmg3415u-7-vb-etched.step` / `dmg3415u-7-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmg3415u-7-vb.step` / `dmg3415u-7-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/dmg3415u-7-vb-datasheet.pdf) (8 pp, sha256 `195d731f76564ce9`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmg3415u-7-vb-datasheet.pdf)