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DMG2301L-HXY

Public Made by Adom

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HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMG2301L-HXY

HXY MOSFET · MOSFETs · SOT-23

DMG2301L-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the P-channel MOSFET, gate-source voltage rated ±12 V with operation at gate voltages as low as 1.8 V.
2 S passive Source; the P-channel MOSFET source terminal, with continuous drain current rated -2.3 A.
3 D passive Drain; drain-source voltage rated -20 V, continuous drain current -2.3 A and pulsed drain current -9 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V TA=25℃ 1
Gate-Source Voltage VGS -12 12 V TA=25℃ 1
Drain Current-Continuous ID -2.3 A TA=25℃ 1
Drain Current-Pulsed IDM -9 A TA=25℃, Note 1 1
Maximum Power Dissipation PD 0.65 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ TA=25℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 178 ℃/W Note 2 1
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) -0.4 -0.7 -1 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 130 140 mΩ VGS=-4.5V, ID=-2A 2
Drain-Source On-State Resistance RDS(ON) 152 170 mΩ VGS=-2.5V, ID=-1.8A 2
Forward Transconductance gFS 4 S VDS=-5V,ID=-2A 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-2A 2
Diode Forward Current IS -2 A 2
Input Capacitance Clss 285 PF VDS=-10V,VGS=0V,F=1.0MHz 2
Output Capacitance Coss 58 PF VDS=-10V,VGS=0V,F=1.0MHz 2
Reverse Transfer Capacitance Crss 32 PF VDS=-10V,VGS=0V,F=1.0MHz 2
Turn-on Delay Time td(on) 9.8 nS VDD=-10V, RL=5Ω, VGS=-4.5V,RGEN=3Ω 2
Turn-on Rise Time tr 4.9 nS VDD=-10V, RL=5Ω, VGS=-4.5V,RGEN=3Ω 2
Turn-Off Delay Time td(off) 20.5 nS VDD=-10V, RL=5Ω, VGS=-4.5V,RGEN=3Ω 2
Turn-Off Fall Time tf 7 nS VDD=-10V, RL=5Ω, VGS=-4.5V,RGEN=3Ω 2
Total Gate Charge Qg 2.9 nC VDS=-10V,ID=-2A, VGS=-4.5V 2
Gate-Source Charge Qgs 0.45 nC VDS=-10V,ID=-2A, VGS=-4.5V 2
Gate-Drain Charge Qgd 0.75 nC VDS=-10V,ID=-2A, VGS=-4.5V 2

CAD (KiCad official)

  • Symbol: DMG2301L-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmg2301l-hxy-etched.step / dmg2301l-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmg2301l-hxy.step / dmg2301l-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 e8bfeca663052dd0, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF