component

DMG1029SVQ-7

Public Made by Adom

by adom

Diodes Incorporated MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsdmg1029svq-7factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
dmg1029svq-7 / README.md
History Download
Ray Publish 0.1.0 ce015f6 17d ago

DMG1029SVQ-7

Diodes Incorporated · MOSFETs · SOT-563

DMG1029SVQ-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET Q1 (60V, 500mA at VGS = 10V); pin 1 is marked by the dot on the package.
2 G1 input Gate of N-channel MOSFET Q1; VGSS is ±20V and gate threshold VGS(th) is 1.0V to 2.5V.
3 D2 passive Drain of P-channel MOSFET Q2 (-60V, -360mA at VGS = -10V).
4 S2 passive Source of P-channel MOSFET Q2.
5 G2 input Gate of P-channel MOSFET Q2; VGSS is ±20V and gate threshold VGS(th) is -1V to -3.0V.
6 D1 passive Drain of N-channel MOSFET Q1 (60V VDSS).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-ch Q1) VDSS 60 V 2
Gate-Source Voltage (N-ch Q1) VGSS -20 20 V 2
Continuous Drain Current (N-ch Q1) ID 500 mA VGS = 10V, steady state, TA = +25°C (Note 6) 2
Continuous Drain Current (N-ch Q1) ID 400 mA VGS = 10V, steady state, TA = +70°C (Note 6) 2
Continuous Drain Current (N-ch Q1) ID 620 mA VGS = 10V, t<10s, TA = +25°C (Note 6) 2
Continuous Drain Current (N-ch Q1) ID 480 mA VGS = 10V, t<10s, TA = +70°C (Note 6) 2
Maximum Body Diode Forward Current (N-ch Q1) IS 500 mA Note 6 2
Pulsed Drain Current (N-ch Q1) IDM 1000 mA Note 6 2
Pulsed Source Current (N-ch Q1) ISM 1000 mA Note 6 2
Drain-Source Voltage (P-ch Q2) VDSS -60 V 2
Gate-Source Voltage (P-ch Q2) VGSS -20 20 V 2
Continuous Drain Current (P-ch Q2) ID -360 mA VGS = -10V, steady state, TA = +25°C (Note 6) 2
Continuous Drain Current (P-ch Q2) ID -280 mA VGS = -10V, steady state, TA = +70°C (Note 6) 2
Continuous Drain Current (P-ch Q2) ID -410 mA VGS = -10V, t<10s, TA = +25°C (Note 6) 2
Continuous Drain Current (P-ch Q2) ID -320 mA VGS = -10V, t<10s, TA = +70°C (Note 6) 2
Maximum Body Diode Forward Current (P-ch Q2) IS -360 mA Note 6 2
Pulsed Drain Current (P-ch Q2) IDM -650 mA Note 6 2
Pulsed Source Current (P-ch Q2) ISM -650 mA Note 6 2
Total Power Dissipation PD 0.45 W TA = +25°C (Note 5) 2
Total Power Dissipation PD 0.28 W TA = +70°C (Note 5) 2
Thermal Resistance, Junction to Ambient RJA 281 °C/W Steady state (Note 5) 2
Thermal Resistance, Junction to Ambient RJA 210 °C/W t<10s (Note 5) 2
Total Power Dissipation PD 1 W TA = +25°C (Note 6) 2
Total Power Dissipation PD 0.62 W TA = +70°C (Note 6) 2
Thermal Resistance, Junction to Ambient RJA 129 °C/W Steady state (Note 6) 2
Thermal Resistance, Junction to Ambient RJA 97 °C/W t<10s (Note 6) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage (N-ch Q1) BVDSS 60 V VGS = 0V, ID = 250μA 3
Zero Gate Voltage Drain Current (N-ch Q1) IDSS 10 nA @TC = +25°C, VDS = 50V, VGS = 0V 3
Gate-Source Leakage (N-ch Q1) IGSS -50 50 nA VGS = ±5V, VDS = 0V 3
Gate Threshold Voltage (N-ch Q1) VGS(th) 1 2.5 V VDS = VGS, ID = 250μA 3
Static Drain-Source On-Resistance (N-ch Q1) RDS(on) 1.3 1.7 Ω VGS = 10V, ID = 500mA 3
Static Drain-Source On-Resistance (N-ch Q1) RDS(on) 1.5 3 Ω VGS = 4.5V, ID = 200mA 3
Forward Transfer Admittance (N-ch Q1) /Yfs/ 80 mS VDS = 10V, ID = 200mA 3
Diode Forward Voltage (N-ch Q1) VSD 1.4 V VGS = 0V, IS = 115mA 3
Drain-Source Breakdown Voltage (P-ch Q2) BVDSS -60 V VGS = 0V, ID = -250μA 3
Zero Gate Voltage Drain Current (P-ch Q2) IDSS -25 nA @TC = +25°C, VDS = -50V, VGS = 0V 3
Gate-Source Leakage (P-ch Q2) IGSS -100 100 nA VGS = ±5V, VDS = 0V 3
Gate Threshold Voltage (P-ch Q2) VGS(th) -1 -3 V VDS = VGS, ID = -250μA 3
Static Drain-Source On-Resistance (P-ch Q2) RDS(on) 2.7 4 Ω VGS = -10V, ID = -500mA 3
Static Drain-Source On-Resistance (P-ch Q2) RDS(on) 3.2 6 Ω VGS = -4.5V, ID = -200mA 3
Forward Transfer Admittance (P-ch Q2) /Yfs/ 50 mS VDS = -25V, ID = -100mA 3
Diode Forward Voltage (P-ch Q2) VSD -1.4 V VGS = 0V, IS = -115mA 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections Indicator: See diagram  Terminals: Finish, Matte Tin annealed over Copper leadframe. 1

CAD (KiCad official)

  • Symbol: DMG1029SVQ-7
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: dmg1029svq-7-etched.step / dmg1029svq-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmg1029svq-7.step / dmg1029svq-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (9 pp, sha256 879c91681f6cc170, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF