DMG1013TQ-7

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    "subcategory": "MOSFETs",
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        "description": "Gate, ESD protected up to 3kV by an internal gate protection diode, with gate-source voltage limited to ±6V and threshold of -0.5V to -1.0V."
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      "Package": "SOT-523",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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    "appearance": {
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        "quote": " Terminals: Finish  Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208",
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          "name": "Drain-Source Breakdown Voltage",
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