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DMG1012TQ-7
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Diodes Incorporated MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMG1012TQ-7
Diodes Incorporated · MOSFETs · SOT-523
DMG1012TQ-7 from Diodes Incorporated, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; ESD protected to 2kV, and gate-source voltage must not exceed the maximum VGSS rating of ±6 V. |
| 2 | S | passive | Source of the N-channel MOSFET, the reference terminal for VGS, with drain-source voltage rated at 20 V maximum (VDSS). |
| 3 | D | passive | Drain of the N-channel MOSFET, rated for 20 V VDSS and 0.63 A continuous drain current at TA = +25°C (steady state). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | 2 | |||
| Gate-Source Voltage | VGSS | -6 | 6 | V | 2 | ||
| Continuous Drain Current | ID | 0.63 | A | Steady state, TA = +25°C (Note 6) | 2 | ||
| Continuous Drain Current | ID | 0.45 | A | Steady state, TA = +85°C (Note 6) | 2 | ||
| Pulsed Drain Current | IDM | 3 | A | 2 | |||
| Total Power Dissipation | PD | 0.28 | W | Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | nA | TJ = +25°C, VDS = 20V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -1 | 1 | µA | VGS = ±4.5V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 0.5 | 1 | V | VDS = VGS, ID = 250μA | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250μA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 0.3 | 0.4 | Ω | VGS = 4.5V, ID = 600mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.4 | 0.5 | Ω | VGS = 2.5V, ID = 500mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.5 | 0.7 | Ω | VGS = 1.8V, ID = 350mA | 2 | |
| Diode Forward Voltage | VSD | 0.7 | 1.2 | V | VGS = 0V, IS = 150mA | 2 | |
| Forward Transfer Admittance | /Yfs/ | 1.4 | S | VDS = 10V, ID = 400mA | 2 | ||
| Input Capacitance | Ciss | 60.67 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 9.68 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 5.37 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 736.6 | pC | VGS = 4.5V, VDS = 10V, ID = 250mA | 2 | ||
| Gate-Source Charge | Qgs | 93.6 | pC | VGS = 4.5V, VDS = 10V, ID = 250mA | 2 | ||
| Gate-Drain Charge | Qgd | 116.6 | pC | VGS = 4.5V, VDS = 10V, ID = 250mA | 2 | ||
| Turn-On Delay Time | tD(ON) | 5.1 | ns | VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA | 2 | ||
| Turn-On Rise Time | tR | 7.4 | ns | VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 26.7 | ns | VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA | 2 | ||
| Turn-Off Fall Time | tF | 12.3 | ns | VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 452 | °C/W | Device mounted on FR-4 PCB, minimum recommended pad layout (Note 6) | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish, Matte Tin Annealed over Alloy 42 LeadFrame. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram | 1 |
CAD (KiCad official)
- Symbol:
DMG1012TQ-7 - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
dmg1012tq-7-etched.step/dmg1012tq-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmg1012tq-7.step/dmg1012tq-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
2f226aaee67a9007, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMG1012TQ-7
**Diodes Incorporated** · MOSFETs · SOT-523
DMG1012TQ-7 from Diodes Incorporated, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; ESD protected to 2kV, and gate-source voltage must not exceed the maximum VGSS rating of ±6 V. |
| 2 | S | passive | Source of the N-channel MOSFET, the reference terminal for VGS, with drain-source voltage rated at 20 V maximum (VDSS). |
| 3 | D | passive | Drain of the N-channel MOSFET, rated for 20 V VDSS and 0.63 A continuous drain current at TA = +25°C (steady state). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 20 | V | | 2 |
| Gate-Source Voltage | VGSS | -6 | | 6 | V | | 2 |
| Continuous Drain Current | ID | | | 0.63 | A | Steady state, TA = +25°C (Note 6) | 2 |
| Continuous Drain Current | ID | | | 0.45 | A | Steady state, TA = +85°C (Note 6) | 2 |
| Pulsed Drain Current | IDM | | | 3 | A | | 2 |
| Total Power Dissipation | PD | | | 0.28 | W | Note 6 | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 100 | nA | TJ = +25°C, VDS = 20V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -1 | | 1 | µA | VGS = ±4.5V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 0.5 | | 1 | V | VDS = VGS, ID = 250μA | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 20 | | | V | VGS = 0V, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.3 | 0.4 | Ω | VGS = 4.5V, ID = 600mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.4 | 0.5 | Ω | VGS = 2.5V, ID = 500mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.5 | 0.7 | Ω | VGS = 1.8V, ID = 350mA | 2 |
| Diode Forward Voltage | VSD | | 0.7 | 1.2 | V | VGS = 0V, IS = 150mA | 2 |
| Forward Transfer Admittance | /Yfs/ | | 1.4 | | S | VDS = 10V, ID = 400mA | 2 |
| Input Capacitance | Ciss | | 60.67 | | pF | VDS = 16V, VGS = 0V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 9.68 | | pF | VDS = 16V, VGS = 0V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 5.37 | | pF | VDS = 16V, VGS = 0V, f = 1.0MHz | 2 |
| Total Gate Charge | Qg | | 736.6 | | pC | VGS = 4.5V, VDS = 10V, ID = 250mA | 2 |
| Gate-Source Charge | Qgs | | 93.6 | | pC | VGS = 4.5V, VDS = 10V, ID = 250mA | 2 |
| Gate-Drain Charge | Qgd | | 116.6 | | pC | VGS = 4.5V, VDS = 10V, ID = 250mA | 2 |
| Turn-On Delay Time | tD(ON) | | 5.1 | | ns | VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA | 2 |
| Turn-On Rise Time | tR | | 7.4 | | ns | VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA | 2 |
| Turn-Off Delay Time | tD(OFF) | | 26.7 | | ns | VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA | 2 |
| Turn-Off Fall Time | tF | | 12.3 | | ns | VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA | 2 |
| Thermal Resistance, Junction to Ambient | RJA | | 452 | | °C/W | Device mounted on FR-4 PCB, minimum recommended pad layout (Note 6) | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Terminals: Finish, Matte Tin Annealed over Alloy 42 LeadFrame. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram | 1 |
## CAD (KiCad official)
- Symbol: `DMG1012TQ-7`
- Footprint: `Package_TO_SOT_SMD:SOT-523`
- 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `dmg1012tq-7-etched.step` / `dmg1012tq-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmg1012tq-7.step` / `dmg1012tq-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8560098767778447360) (7 pp, sha256 `2f226aaee67a9007`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmg1012tq-7-datasheet.pdf)