component
DMF7N65
Public Made by Adomby adom
DIYI Elec Tech MOSFETs, ITO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
DMF7N65
DIYI Elec Tech · MOSFETs · ITO-220AB-3
DMF7N65 from DIYI Elec Tech, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the 650V N-channel MOSFET; gate-source voltage is rated at ±30 V (VGSS) in the absolute maximum ratings. |
| 2 | Drain | passive | Drain terminal of the 650V N-channel MOSFET; rated for a drain-source voltage of 650 V (VDSS) and 7 A continuous drain current. |
| 3 | Source | passive | Source terminal of the 650V N-channel MOSFET, the reference for the gate-source voltage rating of ±30 V (VGSS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DIYI Elec Tech |
| Package | ITO-220AB-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 7 | A | 1 | |||
| Pulsed Drain Current | IDM | 28 | A | Note 2: repetitive rating, pulse width limited by TJ | 1 | ||
| Avalanche Energy Single Pulsed | EAS | 435 | mJ | L=30mH, IAS=5.25A, VDD=50V, RG=25Ω, Starting TJ=25°C (Note 3) | 1 | ||
| Power Dissipation ITO-220 | PD | 48 | W | ITO-220 | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 1.35 | 1.5 | Ω | VGS=10V, ID=3.5A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250μA | 2 | |
| Input Capacitance | CISS | 1210 | 1400 | pF | VDS=25V, VGS=0V, f=1.0 MHz | 2 | |
| Output Capacitance | COSS | 140 | 180 | pF | VDS=25V, VGS=0V, f=1.0 MHz | 2 | |
| Reverse Transfer Capacitance | CRSS | 40 | 50 | pF | VDS=25V, VGS=0V, f=1.0 MHz | 2 | |
| Turn-On Delay Time | tD(ON) | 50 | 70 | ns | VDD=300V, ID=7A, RG=25Ω (Note 1, 2) | 2 | |
| Turn-On Rise Time | tR | 150 | 180 | ns | VDD=300V, ID=7A, RG=25Ω (Note 1, 2) | 2 | |
| Turn-Off Delay Time | tD(OFF) | 380 | 410 | ns | VDD=300V, ID=7A, RG=25Ω (Note 1, 2) | 2 | |
| Turn-Off Fall Time | tF | 180 | 220 | ns | VDD=300V, ID=7A, RG=25Ω (Note 1, 2) | 2 | |
| Total Gate Charge | QG | 29 | 38 | nC | VDS=520V, ID=7A, VGS=10V (Note 1, 2) | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 7 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 28 | A | 2 | |||
| Junction to Ambient (TO-220/ITO-220, TO-262/TO-263 group) | θJA | 62.5 | °C/W | Junction to ambient, TO-220/ITO-220 and TO-262/TO-263 rows | 2 | ||
| Junction to Case ITO-220 | θJC | 5.5 | °C/W | Junction to case, ITO-220 | 2 |
CAD (KiCad official)
- Symbol:
DMF7N65 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: ITO-220AB-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DIYI Elec Tech datasheet (9 pp, sha256
8d0b7eb6ac2cb5aa, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMF7N65
**DIYI Elec Tech** · MOSFETs · ITO-220AB-3
DMF7N65 from DIYI Elec Tech, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the 650V N-channel MOSFET; gate-source voltage is rated at ±30 V (VGSS) in the absolute maximum ratings. |
| 2 | Drain | passive | Drain terminal of the 650V N-channel MOSFET; rated for a drain-source voltage of 650 V (VDSS) and 7 A continuous drain current. |
| 3 | Source | passive | Source terminal of the 650V N-channel MOSFET, the reference for the gate-source voltage rating of ±30 V (VGSS). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DIYI Elec Tech |
| Package | ITO-220AB-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 650 | V | | 1 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 1 |
| Continuous Drain Current | ID | | | 7 | A | | 1 |
| Pulsed Drain Current | IDM | | | 28 | A | Note 2: repetitive rating, pulse width limited by TJ | 1 |
| Avalanche Energy Single Pulsed | EAS | | | 435 | mJ | L=30mH, IAS=5.25A, VDD=50V, RG=25Ω, Starting TJ=25°C (Note 3) | 1 |
| Power Dissipation ITO-220 | PD | | | 48 | W | ITO-220 | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 1.35 | 1.5 | Ω | VGS=10V, ID=3.5A | 2 |
| Gate Threshold Voltage | VGS(TH) | | 2 | 4 | V | VDS=VGS, ID=250μA | 2 |
| Input Capacitance | CISS | | 1210 | 1400 | pF | VDS=25V, VGS=0V, f=1.0 MHz | 2 |
| Output Capacitance | COSS | | 140 | 180 | pF | VDS=25V, VGS=0V, f=1.0 MHz | 2 |
| Reverse Transfer Capacitance | CRSS | | 40 | 50 | pF | VDS=25V, VGS=0V, f=1.0 MHz | 2 |
| Turn-On Delay Time | tD(ON) | | 50 | 70 | ns | VDD=300V, ID=7A, RG=25Ω (Note 1, 2) | 2 |
| Turn-On Rise Time | tR | | 150 | 180 | ns | VDD=300V, ID=7A, RG=25Ω (Note 1, 2) | 2 |
| Turn-Off Delay Time | tD(OFF) | | 380 | 410 | ns | VDD=300V, ID=7A, RG=25Ω (Note 1, 2) | 2 |
| Turn-Off Fall Time | tF | | 180 | 220 | ns | VDD=300V, ID=7A, RG=25Ω (Note 1, 2) | 2 |
| Total Gate Charge | QG | | 29 | 38 | nC | VDS=520V, ID=7A, VGS=10V (Note 1, 2) | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 7 | A | | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 28 | A | | 2 |
| Junction to Ambient (TO-220/ITO-220, TO-262/TO-263 group) | θJA | | | 62.5 | °C/W | Junction to ambient, TO-220/ITO-220 and TO-262/TO-263 rows | 2 |
| Junction to Case ITO-220 | θJC | | | 5.5 | °C/W | Junction to case, ITO-220 | 2 |
## CAD (KiCad official)
- Symbol: `DMF7N65`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: ITO-220AB-3 (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [DIYI Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588954615953952768) (9 pp, sha256 `8d0b7eb6ac2cb5aa`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmf7n65-datasheet.pdf)