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DMD7N65-TR

Public Made by Adom

by adom

DIYI Elec Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMD7N65-TR

DIYI Elec Tech · MOSFETs · TO-252

DMD7N65-TR from DIYI Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the 650V N-channel MOSFET; gate-source voltage is rated ±30 V (VGSS).
2 Drain passive Drain terminal of the 650V N-channel MOSFET; drain-source voltage is rated 650 V (VDSS) with 7 A continuous drain current (ID).
3 Source passive Source terminal of the 650V N-channel MOSFET, serving as the reference for the ±30 V gate-source rating (VGSS).

Key specifications

Parameter Value
Manufacturer DIYI Elec Tech
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Static Drain-Source On-State Resistance RDS(ON) 1.35 1.5 Ω VGS= 10V, ID = 3.5A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250μA 2
Input Capacitance CISS 1210 1400 pF VDS=25V, VGS=0V, f=1.0 MHz 2
Output Capacitance COSS 140 180 pF VDS=25V, VGS=0V, f=1.0 MHz 2
Reverse Transfer Capacitance CRSS 40 50 pF VDS=25V, VGS=0V, f=1.0 MHz 2
Turn-On Delay Time tD(ON) 50 70 ns VDD=300V, ID=7A, RG=25Ω (Note 1, 2) 2
Turn-On Rise Time tR 150 180 ns VDD=300V, ID=7A, RG=25Ω (Note 1, 2) 2
Turn-Off Delay Time tD(OFF) 380 410 ns VDD=300V, ID=7A, RG=25Ω (Note 1, 2) 2
Turn-Off Fall Time tF 180 220 ns VDD=300V, ID=7A, RG=25Ω (Note 1, 2) 2
Total Gate Charge QG 29 38 nC VDS=520V, ID=7A, VGS=10V (Note 1, 2) 2
Drain-Source Leakage Current IDSS 1 μA VDS=650V, VGS=0V 2
Gate-Source Leakage Current Forward IGSS 100 nA VG=30V, VDS=0V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Drain-Source Breakdown Voltage BVDSS 650 V VGS=0V, ID=250μA 2
Maximum Continuous Drain-Source Diode Forward Current IS 7 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 28 A 2
Drain-Source Voltage VDSS 650 V 1
Gate-Source Voltage VGSS -30 30 V 1
Continuous Drain Current ID 7 A 1
Pulsed Drain Current IDM 28 A Repetitive rating, pulse width limited by TJ (Note 2) 1
Avalanche Energy Single Pulsed EAS 435 mJ L=30mH, IAS=5.25A, VDD=50V, RG=25Ω, Starting TJ=25°C (Note 3) 1
Power Dissipation PD 32 W TO-251/TO-252 package 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Junction to Case Thermal Resistance θJC 2.9 °C/W TO-251/TO-252 2
Junction to Ambient Thermal Resistance θJA 110 °C/W TO-251/TO-252 2
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.67 V/°C ID=250μA, Referenced to 25°C 2

CAD (KiCad official)

  • Symbol: DMD7N65-TR
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: dmd7n65-tr-etched.step / dmd7n65-tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmd7n65-tr.step / dmd7n65-tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DIYI Elec Tech datasheet (9 pp, sha256 8d0b7eb6ac2cb5aa, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF