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DMD2N60-TR

Public Made by Adom

by adom

DIYI Elec Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMD2N60-TR

DIYI Elec Tech · MOSFETs · TO-252

DMD2N60-TR from DIYI Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the 600V N-channel MOSFET, with gate-source voltage rated at ±30 V (VGSS).
2 Drain passive Drain of the MOSFET, rated for 600 V drain-source voltage (VDSS) and 2.0 A continuous drain current at TC=25°C.
3 Source passive Source of the MOSFET, with maximum continuous body-diode forward current of 2.0 A and pulsed current of 8.0 A.

Key specifications

Parameter Value
Manufacturer DIYI Elec Tech
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 600 V VGS = 0V, ID = 250μA 2
Drain-Source Leakage Current IDSS 10 μA VDS = 600V, VGS = 0V 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS = 30V, VDS = 0V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS = -30V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-State Resistance RDS(ON) 4 4.4 Ω VGS = 10V, ID = 1A 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, ISD = 2.0 A 2
Drain-Source Voltage VDSS 600 V 1
Gate-Source Voltage VGSS -30 30 V 1
Avalanche Current IAR 2 A 1
Continuous Drain Current ID 2 A 1
Pulsed Drain Current IDM 8 A 1
Avalanche Energy Single Pulsed EAS 115 mJ L = 30mH, IAS = 2.7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 1
Power Dissipation TO-251/TO-252 PD 34 W TO-251/TO-252 1
Junction Temperature TJ 150 °C 1
Operating Temperature TOPR -55 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Junction to Ambient TO-251/TO-252 θJA 110 °C/W TO-251/TO-252 2
Junction to Case TO-251/TO-252 θJC 2.9 °C/W TO-251/TO-252 2

CAD (KiCad official)

  • Symbol: DMD2N60-TR
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: dmd2n60-tr-etched.step / dmd2n60-tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmd2n60-tr.step / dmd2n60-tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DIYI Elec Tech datasheet (8 pp, sha256 d9fea24a568f28bd, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF