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DMC4050SSD-13-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMC4050SSD-13-VB

VBsemi Elec · MOSFETs · SO-8

DMC4050SSD-13-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of MOSFET channel 1; the absolute maximum ratings apply, with VGS limited to ±20 V.
2 G1 input Gate terminal of MOSFET channel 1, with VGS limited to ±20 V per the absolute maximum ratings.
3 S2 passive Source terminal of MOSFET channel 2; the absolute maximum ratings apply, with VGS limited to ±20 V.
4 G2 input Gate terminal of MOSFET channel 2, with VGS limited to ±20 V per the absolute maximum ratings.
5 D2 passive Drain terminal of MOSFET channel 2, sharing the channel 2 drain with pin 6.
6 D2 passive Drain terminal of MOSFET channel 2, sharing the channel 2 drain with pin 5.
7 D1 passive Drain terminal of MOSFET channel 1, sharing the channel 1 drain with pin 8.
8 D1 passive Drain terminal of MOSFET channel 1, sharing the channel 1 drain with pin 7.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Ch) VDS 40 V 1
Drain-Source Voltage (P-Ch) VDS -40 V 1
Gate-Source Voltage (N-Ch) VGS -20 20 V 1
Gate-Source Voltage (P-Ch) VGS -20 20 V 1
Continuous Drain Current (N-Ch) ID 7.6 A TC = 70 °C, TJ = 150 °C 1
Continuous Drain Current (P-Ch) ID -6.8 A TC = 70 °C, TJ = 150 °C 1
Continuous Source-Drain Diode Current (N-Ch) IS 3.6 A TC = 25 °C 1
Continuous Source-Drain Diode Current (P-Ch) IS -3.6 A TC = 25 °C 1
Continuous Source-Drain Diode Current (N-Ch) IS 1.6 A TA = 25 °C 1
Continuous Source-Drain Diode Current (P-Ch) IS -1.6 A TA = 25 °C 1
Single Pulse Avalanche Current (N-Ch) IAS 20 A L = 0.1 mH 1
Single Pulse Avalanche Current (P-Ch) IAS -20 A L = 0.1 mH 1
Maximum Power Dissipation (N-Ch) PD 6.1 W TC = 25 °C 1
Maximum Power Dissipation (P-Ch) PD 5.2 W TC = 25 °C 1
Maximum Power Dissipation (N-Ch) PD 3 W TA = 25 °C 1
Maximum Power Dissipation (P-Ch) PD 3 W TA = 25 °C 1
Maximum Power Dissipation (N-Ch) PD 2.28 W TA = 70 °C 1
Maximum Power Dissipation (P-Ch) PD 2.28 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (N-Ch) RthJA 20 32.5 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient (P-Ch) RthJA 27 32.5 °C/W t ≤ 10 s 1
Maximum Junction-to-Foot (Drain) (N-Ch) RthJF 10 20 °C/W Steady State 1
Maximum Junction-to-Foot (Drain) (P-Ch) RthJF 19 28 °C/W Steady State 1
Maximum Junction-to-Ambient steady state (N-Ch) RthJA 120 °C/W Steady state conditions (note d) 1
Maximum Junction-to-Ambient steady state (P-Ch) RthJA 110 °C/W Steady state conditions (note d) 1
Gate Threshold Voltage (N-Ch) VGS(th) 1 2.2 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage (P-Ch) VGS(th) -0.9 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage (N-Ch) IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Gate-Body Leakage (P-Ch) IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Drain-Source On-State Resistance (N-Ch) RDS(on) 0.015 Ω VGS = 10 V, ID = 6.8 A 2
Drain-Source On-State Resistance (P-Ch) RDS(on) 0.017 Ω VGS = -10 V, ID = -8 A 2
Drain-Source On-State Resistance (P-Ch) RDS(on) 0.019 Ω VGS = -8 V, ID = -6.5 A 2
Drain-Source On-State Resistance (N-Ch) RDS(on) 0.018 Ω VGS = 4.5 V, ID = 6.6 A 2
Drain-Source On-State Resistance (P-Ch) RDS(on) 0.022 Ω VGS = -4.5 V, ID = -5 A 2
Gate Resistance (N-Ch) Rg 0.3 1.3 2.6 Ω f = 1 MHz 2
Gate Resistance (P-Ch) Rg 1.3 6.4 12.8 Ω f = 1 MHz 2
Total Gate Charge (N-Ch) Qg 13.3 20 nC VDS = 20 V, VGS = 10 V, ID = 10 A 2
Total Gate Charge (P-Ch) Qg 13 20 nC VDS = -20 V, VGS = -10 V, ID = -10 A 2
Total Gate Charge (N-Ch) Qg 6.5 10 nC VDS = 20 V, VGS = 4.5 V, ID = 10 A 2
Total Gate Charge (P-Ch) Qg 21.7 33 nC VDS = -20 V, VGS = -4.5 V, ID = -10 A 2
Turn-On Delay Time (P-Ch) td(on) 10 20 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Rise Time (P-Ch) tr 9 18 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Turn-Off Delay Time (P-Ch) td(off) 50 90 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Fall Time (P-Ch) tf 13 26 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Turn-On Delay Time (P-Ch) td(on) 42 75 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 3
Rise Time (P-Ch) tr 40 70 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 3
Turn-Off Delay Time (P-Ch) td(off) 40 70 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 3
Fall Time (P-Ch) tf 18 35 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 3
Body Diode Voltage (N-Ch) VSD 0.81 1.2 V IS = 5.4 A 3
Body Diode Voltage (P-Ch) VSD -0.77 -1.2 V IS = -2 A 3
Body Diode Reverse Recovery Time (P-Ch) trr 41 80 ns IF = -5 A, dI/dt = -100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Charge (N-Ch) Qrr 10 20 nC 3
Body Diode Reverse Recovery Charge (P-Ch) Qrr 32 65 nC 3

CAD (KiCad official)

  • Symbol: DMC4050SSD-13-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dmc4050ssd-13-vb-etched.step / dmc4050ssd-13-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmc4050ssd-13-vb.step / dmc4050ssd-13-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 3ebc9a673e4226b1, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF